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LMBT3904WT3G Dataheets PDF



Part Number LMBT3904WT3G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description General Purpose Transistor
Datasheet LMBT3904WT3G DatasheetLMBT3904WT3G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon ●FEATURES 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ●DEVICE MARKING AND RESISTOR VALUES Device Marking Shipping LMBT3904WT1G AM 3000/Tape&Reel LMBT3904WT3G AM 10000/Tape&Reel LMBT3904W T1G S-LMBT3904W T1G 3 1 2 SOT– 323 / SC–70 .

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon ●FEATURES 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ●DEVICE MARKING AND RESISTOR VALUES Device Marking Shipping LMBT3904WT1G AM 3000/Tape&Reel LMBT3904WT3G AM 10000/Tape&Reel LMBT3904W T1G S-LMBT3904W T1G 3 1 2 SOT– 323 / SC–70 ●MAXIMUM RATINGS(Ta = 25℃) Parameter Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Limits 40 60 6 200 Unit Vdc Vdc Vdc mAdc 1 BASE 3 COLLECTOR 2 EMITTER ●THERMAL CHARACTERISTICS Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25°C Thermal Resistance, Junction–to–Ambient(Note 1) Junction and Storage temperature 1. FR–5 = 1.0×0.75×0.062 in. PD 150 mW RΘJA 833 ℃/W TJ,Tstg −55∼+150 ℃ June,2015 Rev.A 1/6 LESHAN RADIO COMPANY, LTD. LMBT3904W T1G,S-LMBT3904W T1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) OFF CHARACTERISTICS Characteristic Symbol Collector–Emitter Breakdown Voltage V BR(CEO) (IC = 1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage V BR(CBO) (I C = 10 μAdc, I E = 0) Emitter–Base Breakdown Voltage VBR(EBO) (I E = 10 μAdc, I C = 0) Collector Cutoff Current ICEX ( V CE = 30 Vdc, V EB = 3.0Vdc) Base Cutoff Current IBL (V CE = 30 Vdc, V EB = 3.0 Vdc) ON CHARACTERISTICS (Note 3.) DC Current Gain hFE (I C = 0.1 mAdc, V CE = 1.0 Vdc) (I C = 1.0 mAdc, V CE = 1.0 Vdc) (I C = 10 mAdc, V CE = 1.0 Vdc) (I C = 50 mAdc, V CE = 1.0 Vdc) (I C = 100 mAdc, V CE = 1.0 Vdc) Collector–Emitter Saturation Voltage(3) VCE(sat) (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50mAdc, I B = 5.0 mAdc) Base–Emitter Saturation Voltage VBE(sat) (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50mAdc, I B = 5.0 mAdc) SMALL–SIGNAL CHARACTERISTICS Characteristic Current–Gain — Bandwidth Product (I C = 10mAdc, V CE= 20Vdc, f = 100MHz) Output Capacitance (V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio Symbol fT Cobo Cibo hie hre (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Small–Signal Current Gain hfe (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Output Admittance hoe (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Noise Figure NF (VCE=5V, IC=100μA, RS=1.0kΩ ,f =1.0kHz) 3. Pulse Test: Pulse Width <300 μs, Duty Cycle <2.0%. Min. 40 60 6 – – 40 70 100 60 30 – – 0.65 – Min. 300 – – 1 0.5 100 1 – Typ. Max. Unit V –– V –– V –– nA – 50 nA – 50 –– –– – 300 –– –– V – 0.2 – 0.3 V – 0.85 – 0.95 Typ. Max. Unit MHz –– pF –4 pF –8 kΩ – 10 X 10 –4 –8 – 400 μmhos – 40 dB –5 June,2015 Rev.A 2/6 LESHAN RADIO COMPANY, LTD. LMBT3904W T1G,S-LMBT3904W T1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) SWITCHING CHARACTERISTICS Delay Time (V CC = 3.0 Vdc, V BE= – 0.5 Vdc,I C = 10 td Rise Time mAdc, I B1 = 1.0 tr mAdc) Storage Time Fall Time (V CC = 3.0 Vdc, I C = 10 mAdc,I B1 = I B2 = 1.0 mAdc) ts tf – – – – – 35 ns – 35 – 200 – 50 DUTY CYCLE = 2% 300 ns - 0.5 V +10.9 V 10 k < 1 ns +3 V 275 10 < t1 < 500 ms DUTY CYCLE = 2% t1 +10.9 V CS < 4 pF* 0 - 9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors 10 k 1N916 +3 V 275 CS < 4 pF* Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit June,2015 Rev.A 3/6 C,Capacitance(pF) LESHAN RADIO COMPANY, LTD. LMBT3904W T1G,S-LMBT3904W T1G 10 1 0.1 ELECTRICAL CHARACTERISTICS CURVES 1 10 VR, Reverse Voltage (V) Cobo Cibo HFE, DC Current Gain 180 160 140 120 100 80 60 40 20 0 0.1 1 IC, Collector Current (mA) Figure 3. Capacitance Figure 4. Current Gain 10 1000 VCE=1V 100 10 1 0.1 1 10 IC, Collector Current (mA) 100 25℃ 150℃ -55℃ Figure 5. DC Current Gain VCE, Collector Emitter Voltage (V) 1 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 IB, Base Current (mA) 10 IC=1mA IC=10mA IC=30mA IC=100mA Figure 6. Collector Saturation Region HFE, DC Current Gain June,2015 Rev.A 4/6 VCEsat, Collector-Emitter Saturation Voltage (V) LESHAN RADIO COMPANY, LTD. LMBT3904W T1G,S-LMBT3904W T1G ELECTRICAL CHARACTERISTICS CURVES VBEsat, Base-Emitter Saturation Voltage(V) 2.5 IC/IB=10 2 1.5 1.4 IC/IB=10 1.2 1 0.8 1 0.6 0.4 0.5 0.2 0 0.001 0.01 0.1 IC, Collector Current(A) 1 0 0.0001 0.001 0.01 0.1 IC, Collector Current(A) 25℃ 150℃ -55℃ 25℃ 150℃ -55℃ Figure 7. VCE(sat) vs IC Figure 8. VBE(sat) vs IC 1 1.4 VCE=1V 1.2 1 0.8 0.6 0.4 0.2 0 0.0001 0.001 0.01 0.1 IC, Collector Current(A) 25℃ 150℃ -55℃ Figure 9. VBE(on) vs. IC 1 VBE(on), Base-Emitter Voltage(V) June,2015 Rev.A 5/6 LESHAN RADIO COMPANY, LTD. LMBT3904W T1G,S-LMBT3904W T1G SC-70 / SOT-323 A L 3 S 1 B 2 D G 0.05 (0.002) H CN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5.


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