LMBT3906TT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽSimplifies Circuit Design. ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device Marking LMBT3906TT1G S-LMBT3906TT1G LMBT3906TT3G S-LMBT3906TT3G 2A 2A 2A 2A MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Shipping 3000/Tape & Reel 10000/Tape & Reel Symbol V CEO V CBO V EBO IC Value – 40 – 40 – 5.0 – 200 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 4 Board(1) T A =25 °C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation FR-4 Board (2), T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD R θJA PD R θJA T J , T stg Max Unit 200 mW 1.6 mW/°C 600 °C/W 300 mW 2.4 400 –55 to +150 mW/°C °C/W °C LMBT3906TT1G S-LMBT3906TT1G 1 BASE SC-89 3 COLLECTOR 2 EMITTER DEVICE MARKING LMBT3906TT1G = 2A ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –10 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –10 µAdc, I C = 0) Base Cutoff ...