LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE ƽSimplifies Circuit Design. ƽ We declare tha...
LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
NPN Silicon
FEATURE ƽSimplifies Circuit Design. ƽ We declare that the material of product compliance with
RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
LMBT3904TT1G S-LMBT3904TT1G
Device LMBT3904TT1G S-LMBT3904TT1G LMBT3904TT3G S-LMBT3904TT3G MAXIMUM RATINGS
Rating
Marking
MA MA MA MA
Shipping
3000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 10000/Tape&Reel
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
40 Vdc 60 Vdc 6.0 Vdc 200 mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 4 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation FR-4 Board(2), TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
RθJA PD
RθJA TJ , Tstg
Max 200
1.6 600 300
2.4 400 –55 to +150
Unit mW
mW/°C °C/W mW
mW/°C °C/W
°C
SC-89
1 BASE
3 COLLECTOR
2 EMITTER
DEVICE MARKING
LMBT3904TT1G = AM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
V (BR)CEO
(I C = 1.0 mAdc)
Collector–Base Breakdown Voltage (I C = 10 µAdc)
V (BR)CBO
Emitter–Base Breakdown Voltage
V (BR)EBO
...