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W13NK60Z Dataheets PDF



Part Number W13NK60Z
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STW13NK60Z
Datasheet W13NK60Z DatasheetW13NK60Z Datasheet (PDF)

STB13NK60Z - STB13NK60Z-1 STP13NK60Z/FP - STW13NK60Z N-CHANNEL 600V - 0.48Ω - 13A - TO-220/FP - D²/I²PAK - TO-247 Zener-Protected SuperMESH™ MOSFET General features Type VDSS RDS(on) STB13NK60Z-1 STB13NK60Z STP13NK60ZFP STP13NK60Z STW13NK60Z 600 V 600 V 600 V 600 V 600 V <0.55 Ω <0.55 Ω <0.55 Ω <0.55 Ω <0.55 Ω ID 13 A 13 A 13 A 13 A 13 A Pw 150 W 150 W 35 W 150 W 150 W ■ GATE CHARGE MINIMIZED ■ VERY LOW INTRINSIC CAPACITANCES ■ VERY GOOD MANUFACTURING REPEABILITY Description The SuperM.

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STB13NK60Z - STB13NK60Z-1 STP13NK60Z/FP - STW13NK60Z N-CHANNEL 600V - 0.48Ω - 13A - TO-220/FP - D²/I²PAK - TO-247 Zener-Protected SuperMESH™ MOSFET General features Type VDSS RDS(on) STB13NK60Z-1 STB13NK60Z STP13NK60ZFP STP13NK60Z STW13NK60Z 600 V 600 V 600 V 600 V 600 V <0.55 Ω <0.55 Ω <0.55 Ω <0.55 Ω <0.55 Ω ID 13 A 13 A 13 A 13 A 13 A Pw 150 W 150 W 35 W 150 W 150 W ■ GATE CHARGE MINIMIZED ■ VERY LOW INTRINSIC CAPACITANCES ■ VERY GOOD MANUFACTURING REPEABILITY Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Applications ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES ■ DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE Order codes Package 3 2 1 TO-220 3 2 1 TO-220FP 123 I²PAK 3 2 1 TO-247 3 1 D²PAK Internal schematic diagram Sales Type STB13NK60Z-1 STB13NK60ZT4 STP13NK60ZFP STP13NK60Z STW13NK60Z September 2005 Marking B13NK60Z-1 B13NK60Z P13NK60ZFP P13NK60Z W13NK60Z Package I²PAK D²PAK TO-220FP TO-220 TO-247 Packaging TUBE TAPE & REEL TUBE TUBE TUBE Rev 2 1/17 www.st.com 17 1 Electrical ratings STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-Source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20kΩ) VGS Gate-Source Voltage ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C IDM Note 2 Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ) dv/dt Note 3 Peak Diode Recovery voltage slope VISO Insulation Withstand Volatge (DC) Tj Operating Junction Temperature Tstg Storage Temperature Value TO-220 / TO-247 I²PAK / D²PAK TO-220FP 13 8.2 52 150 1.20 -- 600 600 ± 30 4000 4.5 13 (Note 1) 8.2 (Note 1) 52 (Note 1) 35 0.27 2500 -55 to 150 Unit V V V A A A W W/°C V V/ns V °C Table 2. Thermal data Rthj-case Rthj-pcb Note 7 Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-pcb Max Thermal Resistance Junction-amb Max Maximum Lead Temperature For Soldering Purpose TO-220 I²PAK / TO-247 D²PAK 0.83 -- 60 62.5 300 TO-220FP Unit 3.6 °C/W -- °C/W °C/W °C Table 3. Avalanche characteristics Symbol Parameter IAR Avalanche Current, repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy EAS (starting Tj=25°C, ID=IAR, VDD= 50V) Max Value 10 400 Unit A mJ 2/17 STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z 2 Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current (VGS = 0) IGSS VGS(th) RDS(on) Gate Body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-Source On Resistance Test Conditions ID = 1 mA, VGS= 0 VDS = Max Rating, VDS = Max Rating,Tc=125°C VGS = ±20 V VDS= VGS, ID = 100 µA VGS= 10 V, ID= 4.5 A Min. 600 3 Typ. 3.75 0.48 Max. 1 50 ±10 4.5 0.55 Unit V µA µA µA V Ω Table 5. Dynamic Symbol Parameter Test Conditions gfs Note 4 Ciss Coss Crss Coss eq. Note 5 Qg Qgs Qgd Forward Transconductance VDS =8V, ID = 5 A Input Capacitance Output Capacitance VDS =25V, f=1 MHz, VGS=0 Reverse Transfer Capacitance Equivalent Ouput Capacitance VGS=0, VDS =0V to 480V Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=480V, ID = 10A VGS =10V (see Figure 19) Min. Typ. 11 2030 210 48 Max. Unit S pF pF pF 125 pF 66 92 nC 11 nC 33 nC Table 6. Switching times Symbol Parameter td(on) tr Turn-on Delay Time Rise Time td(off) tf tr(Voff) tf tc Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD=300 V, ID= 5A, RG=4.7Ω, VGS=10V (see Figure 20) VDD=300 V, ID= 5A, RG=4.7Ω, VGS=10V (see Figure 20) VDD=480 V, ID= 10A, RG=4.7Ω, VGS=10V (see Figure 20) Min. Typ. Max. Unit 22 ns 14 ns 61 ns 12 ns 10 ns 9 ns 20 ns 3/17 2 Electrical characteristics STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z Table 7. Gate-source zener diode Symbol Parameter BVGSO Note 6 Gate-Source Breakdown Voltage Test Conditions Igs=±1mA (Open Drain) Min. 30 Table 8. Source drain diode Symbol Parameter Test Conditions ISD Source-drain Current ISDMNote 2 Source-drain Current (pulsed) VSDNote 4 Forward on Voltage ISD = 10 A, VGS=0 trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD= 10A, di/dt = 100A/µs, VDD=35 V, Tj=150°C Min. Typ. Max. Unit V Typ. 570 4.5 16 Max. 10 40 1.6 Unit A A V ns µC A (1) Limited only by maximum temperature allowed (2) Pulse width limited by safe operating area (3) ISD ≤13A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (4) Pulsed: pulse duration = 300µs,.


UN152M W13NK60Z CSC8005


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