Document
STB13NK60Z - STB13NK60Z-1 STP13NK60Z/FP - STW13NK60Z
N-CHANNEL 600V - 0.48Ω - 13A - TO-220/FP - D²/I²PAK - TO-247 Zener-Protected SuperMESH™ MOSFET
General features
Type
VDSS RDS(on)
STB13NK60Z-1 STB13NK60Z STP13NK60ZFP STP13NK60Z STW13NK60Z
600 V 600 V 600 V 600 V 600 V
<0.55 Ω <0.55 Ω <0.55 Ω <0.55 Ω <0.55 Ω
ID
13 A 13 A 13 A 13 A 13 A
Pw
150 W 150 W 35 W 150 W 150 W
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEABILITY
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Applications
■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES ■ DC-AC CONVERTERS FOR WELDING, UPS
AND MOTOR DRIVE
Order codes
Package
3 2 1
TO-220
3 2 1
TO-220FP
123
I²PAK
3 2 1
TO-247
3 1
D²PAK
Internal schematic diagram
Sales Type STB13NK60Z-1 STB13NK60ZT4 STP13NK60ZFP STP13NK60Z STW13NK60Z
September 2005
Marking B13NK60Z-1 B13NK60Z P13NK60ZFP P13NK60Z W13NK60Z
Package I²PAK D²PAK
TO-220FP TO-220 TO-247
Packaging
TUBE
TAPE & REEL
TUBE
TUBE
TUBE
Rev 2 1/17
www.st.com
17
1 Electrical ratings
STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-Source Voltage (VGS = 0)
VDGR Drain-gate Voltage (RGS = 20kΩ)
VGS Gate-Source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM Note 2 Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ)
dv/dt Note 3 Peak Diode Recovery voltage slope
VISO
Insulation Withstand Volatge (DC)
Tj Operating Junction Temperature Tstg Storage Temperature
Value
TO-220 / TO-247 I²PAK / D²PAK
TO-220FP
13 8.2 52 150 1.20
--
600 600 ± 30
4000 4.5
13 (Note 1) 8.2 (Note 1) 52 (Note 1)
35 0.27
2500
-55 to 150
Unit
V V V A A A W W/°C V V/ns V
°C
Table 2. Thermal data
Rthj-case Rthj-pcb Note 7 Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
Thermal Resistance Junction-amb Max Maximum Lead Temperature For Soldering Purpose
TO-220 I²PAK / TO-247
D²PAK
0.83
-- 60
62.5
300
TO-220FP Unit 3.6 °C/W -- °C/W °C/W °C
Table 3. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche Current, repetitive or Not-Repetitive (pulse width limited by Tj max)
Single Pulse Avalanche Energy EAS (starting Tj=25°C, ID=IAR, VDD= 50V)
Max Value 10 400
Unit A mJ
2/17
STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z 2 Electrical characteristics
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
V(BR)DSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current (VGS = 0)
IGSS VGS(th) RDS(on)
Gate Body Leakage Current (VDS = 0)
Gate Threshold Voltage
Static Drain-Source On Resistance
Test Conditions
ID = 1 mA, VGS= 0 VDS = Max Rating, VDS = Max Rating,Tc=125°C VGS = ±20 V VDS= VGS, ID = 100 µA VGS= 10 V, ID= 4.5 A
Min. 600
3
Typ.
3.75 0.48
Max.
1 50 ±10 4.5 0.55
Unit V µA µA
µA V Ω
Table 5. Dynamic
Symbol
Parameter
Test Conditions
gfs Note 4
Ciss Coss Crss
Coss eq. Note 5
Qg Qgs Qgd
Forward Transconductance VDS =8V, ID = 5 A
Input Capacitance
Output Capacitance
VDS =25V, f=1 MHz, VGS=0
Reverse Transfer Capacitance
Equivalent Ouput Capacitance VGS=0, VDS =0V to 480V
Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD=480V, ID = 10A VGS =10V (see Figure 19)
Min.
Typ.
11
2030 210 48
Max.
Unit
S
pF pF pF
125 pF
66 92 nC 11 nC 33 nC
Table 6. Switching times
Symbol
Parameter
td(on) tr
Turn-on Delay Time Rise Time
td(off) tf
tr(Voff) tf tc
Turn-off Delay Time Fall Time
Off-voltage Rise Time Fall Time Cross-over Time
Test Conditions
VDD=300 V, ID= 5A, RG=4.7Ω, VGS=10V (see Figure 20)
VDD=300 V, ID= 5A, RG=4.7Ω, VGS=10V (see Figure 20)
VDD=480 V, ID= 10A, RG=4.7Ω, VGS=10V (see Figure 20)
Min. Typ. Max. Unit
22 ns 14 ns
61 ns 12 ns
10 ns 9 ns 20 ns
3/17
2 Electrical characteristics STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z
Table 7. Gate-source zener diode
Symbol
Parameter
BVGSO Note 6
Gate-Source Breakdown Voltage
Test Conditions
Igs=±1mA (Open Drain)
Min. 30
Table 8. Source drain diode
Symbol
Parameter
Test Conditions
ISD Source-drain Current ISDMNote 2 Source-drain Current (pulsed)
VSDNote 4 Forward on Voltage
ISD = 10 A, VGS=0
trr Qrr IRRM
Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
ISD= 10A, di/dt = 100A/µs, VDD=35 V, Tj=150°C
Min.
Typ.
Max. Unit V
Typ.
570 4.5 16
Max.
10 40
1.6
Unit
A A
V
ns µC A
(1) Limited only by maximum temperature allowed
(2) Pulse width limited by safe operating area
(3) ISD ≤13A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (4) Pulsed: pulse duration = 300µs,.