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K2796

2SK2796

Description

2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.12Ω typ. 4V gate drive devices. High speed switching Outline DPAK |1 D G S ADE-208-534C (Z) 4th. Edition Jun 1998 44 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2796(L), 2SK2796(S) Absolute Maximum Ratings (Ta = 25°C) Item Sy...

Hitachi Semiconductor

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