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MMUN2115

SEMTECH

PNP Silicon Epitaxial Planar Transistor

MMUN2111…MMUN2134 PNP Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applicat...


SEMTECH

MMUN2115

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Description
MMUN2111…MMUN2134 PNP Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applications Resistor Values Type MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2115 MMUN2116 MMUN2130 MMUN2131 MMUN2132 MMUN2133 MMUN2134 R1 (K) 10 22 47 10 10 4.7 1 2.2 4.7 4.7 22 R2 (K) 10 22 47 47 ∞ ∞ 1 2.2 4.7 47 47 SOT-23 Plastic Package Base (Input) R1 R2 Collector (Output) Emitter (Common) Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -IC Ptot Tj TS Value 50 50 100 200 150 - 55 to + 150 Unit V V mA mW OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/08/2007 MMUN2111…MMUN2134 Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 10 V, -IC = 5 mA Collector Base Cutoff Current at -VCB = 50 V Collector Emitter Cutoff Current at -VCE = 50 V Emitter Base Cutoff Current at -VEB = 6 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 2 mA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.3 mA at -IC = 10 mA, -IB = 5 mA at -IC = 10 mA, -IB = 1 mA Symbol MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2115 MMUN2116 MMUN2130 MMUN2131 MMUN2132 MMUN2133 MMUN2134 hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE -ICBO -ICEO MMUN2111 MM...




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