MMUN2116

Bias Resistor Transistor PNP Silicon MMUN2111 Series 1 BASE R1 R2 COLLECTOR 3 2 EMITTER 3 1 2 SOT-23 Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO VCBO IC Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1)TA=25 C Derate above 25 C Symbol PD Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Range 1.FR-4 @ minimum pad 2.FR-4 @ 1.0 l 1.0 inch Pad R θJA TJ,Tstg Value 50 50 100 Max 246 (1) 400 (2) 1.5 (1) 2.0 (2) 508 311 -55 to +150 Unit Vdc Vdc mAdc Unit mW mW/ C C/W C l 88 Device Marking and Resistor Values Device MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2115 MMUN2116 Marking A6A A6B A6C A6D A6E A6F R1(K) 10 22 47 10 10 4.7 R2(K) 10 22 47 47 Device MMUN2130 MMUN2131 MMUN2132 MMUN2133 MMUN2134 Marking A6G A6H A6J A6K A6L R1(K) 1.0 2.2 4.7 4.7 22 R2(K) 1.0 2.2 4.7 47 47 WEITRON http://www.weitron.com.tw MMUN2111 Series WE ITR ON Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit Off Characteristics Collector-Emitter Breakdown Voltage (IC=2.0mA, IB=0) Collector-Base Breakdown Voltage (IC=10 uA ,IE=0) Collector-Base Cutoff Voltage (VCB=50 V, IE =0) Collector-Emitter Cutoff Current (VCE=50V, IB=0) Emitter-Base Cutoff Current (VEB=6.0V, IC=0) MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2115 MMUN2116 MMUN2130 MMUN2131 MMUN2132 MMUN2133 MMUN2134 V(BR)CEO V(B...