HM4953

HM4953 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V D1 G1 G2 D2 S1 S2 Schematic diagram HM4953 ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package HM4953 HM4953 SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit -30 ±20 -5.1 -20 2.5 -55 To 150 50 Unit V V A A W ℃ ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com Page 1...