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IRGP4750D-EPbF
Insulated Gate Bipolar Transistor
Description
IRGP4750DPbF IRGP4750D-EPbF VCES = 650V IC = 50A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 35A Applications Industrial Motor Drive UPS Solar Inverters Welding Features Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-...
International Rectifier
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IRGP4750D-EPbF
Insulated Gate Bipolar Transistor
- International Rectifier
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