UltraCMOS SP4T RF Switch
Product Description
The PE42540 is a HaRP™ technology-enhanced absorptive SP4T RF switch developed on UltraCMOS® process...
Description
Product Description
The PE42540 is a HaRP™ technology-enhanced absorptive SP4T RF switch developed on UltraCMOS® process technology. This switch is designed specifically to support the requirements of the test equipment and ATE market. It comprises four symmetric RF ports and has very high isolation. An on-chip CMOS decode logic facilitates a two-pin low voltage CMOS control interface and an optional external VSS feature. High ESD tolerance and no blocking capacitor requirements make this the ultimate in integration and ruggedness.
The PE42540 is manufactured on PSemi’s UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS.
Figure 1. Functional Diagram RFC
Product Specification PE42540
UltraCMOS® SP4T RF Switch 10 Hz–8 GHz
Features
HaRP™ technology enhanced
Fast settling time Eliminates gate and phase lag No drift in insertion loss and phase
High linearity: 58 dBm IIP3 Low insertion loss: 0.8 dB @ 3 GHz,
1.0 dB @ 6 GHz and 1.2 dB @ 8 GHz
High isolation: 45 dB @ 3 GHz,
39 dB @ 6 GHz and 31 dB @ 8 GHz
Maximum power handling: 30 dBm @
8 GHz
High ESD tolerance of 2 kV HBM on
RFC and 1 kV HBM on all other pins
Figure 2. Package Type 32-lead 5 × 5 mm LGA
RF1
ESD
50
RF3
ESD
50
RF2
ESD
50
RF4
ESD
CMOS Control/
50
Driver and ESD
VDD V1
V2 VssEXT
71-0067
Document No. DOC-77985-6 | www.psemi.com
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