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Si4420DYPbF

International Rectifier
Part Number Si4420DYPbF
Manufacturer International Rectifier
Description Power MOSFET
Published Oct 4, 2015
Detailed Description PD - 95729 Si4420DYPbF l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive l L...
Datasheet PDF File Si4420DYPbF PDF File

Si4420DYPbF
Si4420DYPbF

Overview
PD - 95729 Si4420DYPbF l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive l Lead-Free S S S G Description This N-channel HEXFET® power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology.
The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications.
HEXFET® Power MOSFET AA 1 8D 2 7D 3 6D 4 5D Top View VDSS = 30V RDS(on) = 0.
009Ω SO-8 Absolute Maxi...


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