Document
FDMS2506SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
FDMS2506SDC
N-Channel Dual CoolTM PowerTrench® SyncFETTM
25 V, 49 A, 1.45 mΩ
July 2013
Features
General Description
Dual CoolTM Top Side Cooling PQFN package
Max rDS(on) = 1.45 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 26 A High performance technology for extremely low rDS(on) SyncFET Schottky Body Diode RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
Pin 1
S SS G
D5 D6
4G 3S
D DD D
Top
Power 56
Bottom
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS
ID
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited)
-Continuous (Silicon limited) -Continuous -Pulsed
TC = 25 °C TC = 25 °C TA = 25 °C
EAS dv/dt
Single Pulse Avalanche Energy Peak Diode Recovery dv/dt
PD TJ, TSTG
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D7 D8
(Note 4)
(Note 1a) (Note 3) (Note 5)
(Note 1a)
2S 1S
Ratings 25 ±20 49 202 39 200 220 1.6 89 3.3
-55 to +150
Units V V
A
mJ V/ns
W °C
RθJC RθJC RθJA RθJA RθJA RθJA RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Top Source) (Bottom Drain)
(Note 1a) (Note 1b) (Note 1i) (Note 1j) (Note 1k)
2.7 1.4 38 81 16 23 11
°C/W
Device Marking
Device
2506S
FDMS2506SDC
©2010 Fairchild Semiconductor Corporation FDMS2506SDC Rev.C1
Package Dual CoolTM Power 56
1
Reel Size 13’’
Tape Width 12 mm
Quantity 3000 units
www.fairchildsemi.com
FDMS2506SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS ΔBVDSS
ΔTJ IDSS IGSS
Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current, Forward
ID = 1 mA, VGS = 0 V
ID = 10 mA, referenced to 25 °C
VDS = 20 V, VGS = 0 V VGS = 20 V, VDS = 0 V
On Characteristics
VGS(th) ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1 mA
ID = 10 mA, referenced to 25 °C
VGS = 10 V, ID = 30 A VGS = 4.5 V, ID = 26 A VGS = 10 V, ID = 30 A, TJ = 125 °C VDS = 5 V, ID = 30 A
Dynamic Characteristics
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VDS = 13 V, VGS = 0 V, f = 1 MHz
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge
VDD = 13 V, ID = 30 A, VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 13 V,
ID = 30 A
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2 A VGS = 0 V, IS = 30 A
(Note 2) (Note 2)
IF = 30 A, di/dt = 300 A/μs
Min 25
1.2
Typ
21
1.7 -5 1.2 1.6 1.6 171
4470 1200 244 0.8
16 7.4 41 4.8 66 30 13.4 7.5
0.40 0.76 35 39
Max Units
V mV/°C 500 μA 100 nA
3.0 V
mV/°C
1.45 2.1 mΩ 2.0
S
5945 1560 370 1.8
pF pF pF
Ω
29 ns 15 ns 66 ns 10 ns 93 nC 43 nC
nC nC
0.7 1.2
V
56 ns
63 nC
©2010 Fairchild Semiconductor Corporation FDMS2506SDC Rev.C1
2
www.fairchildsemi.com
FDMS2506SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Thermal Characteristics
RθJC RθJC RθJA RθJA RθJA RθJA RθJA RθJA RθJA RθJA RθJA RθJA RθJA RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient
(Top Source) (Bottom Drain)
(Note 1a) (Note 1b) (Note 1c) (Note 1d) (Note 1e) (No.