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FDMS2506SDC Dataheets PDF



Part Number FDMS2506SDC
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDMS2506SDC DatasheetFDMS2506SDC Datasheet (PDF)

FDMS2506SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM FDMS2506SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM 25 V, 49 A, 1.45 mΩ July 2013 Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 1.45 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 26 A „ High performance technology for extremely low rDS(on) „ SyncFET Schottky Body Diode „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced P.

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FDMS2506SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM FDMS2506SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM 25 V, 49 A, 1.45 mΩ July 2013 Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 1.45 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 26 A „ High performance technology for extremely low rDS(on) „ SyncFET Schottky Body Diode „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications „ Synchronous Rectifier for DC/DC Converters „ Telecom Secondary Side Rectification „ High End Server/Workstation Vcore Low Side Pin 1 S SS G D5 D6 4G 3S D DD D Top Power 56 Bottom MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C EAS dv/dt Single Pulse Avalanche Energy Peak Diode Recovery dv/dt PD TJ, TSTG Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics D7 D8 (Note 4) (Note 1a) (Note 3) (Note 5) (Note 1a) 2S 1S Ratings 25 ±20 49 202 39 200 220 1.6 89 3.3 -55 to +150 Units V V A mJ V/ns W °C RθJC RθJC RθJA RθJA RθJA RθJA RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Top Source) (Bottom Drain) (Note 1a) (Note 1b) (Note 1i) (Note 1j) (Note 1k) 2.7 1.4 38 81 16 23 11 °C/W Device Marking Device 2506S FDMS2506SDC ©2010 Fairchild Semiconductor Corporation FDMS2506SDC Rev.C1 Package Dual CoolTM Power 56 1 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS2506SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current, Forward ID = 1 mA, VGS = 0 V ID = 10 mA, referenced to 25 °C VDS = 20 V, VGS = 0 V VGS = 20 V, VDS = 0 V On Characteristics VGS(th) ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance VGS = VDS, ID = 1 mA ID = 10 mA, referenced to 25 °C VGS = 10 V, ID = 30 A VGS = 4.5 V, ID = 26 A VGS = 10 V, ID = 30 A, TJ = 125 °C VDS = 5 V, ID = 30 A Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 13 V, VGS = 0 V, f = 1 MHz Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge VDD = 13 V, ID = 30 A, VGS = 10 V, RGEN = 6 Ω VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 13 V, ID = 30 A Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A VGS = 0 V, IS = 30 A (Note 2) (Note 2) IF = 30 A, di/dt = 300 A/μs Min 25 1.2 Typ 21 1.7 -5 1.2 1.6 1.6 171 4470 1200 244 0.8 16 7.4 41 4.8 66 30 13.4 7.5 0.40 0.76 35 39 Max Units V mV/°C 500 μA 100 nA 3.0 V mV/°C 1.45 2.1 mΩ 2.0 S 5945 1560 370 1.8 pF pF pF Ω 29 ns 15 ns 66 ns 10 ns 93 nC 43 nC nC nC 0.7 1.2 V 56 ns 63 nC ©2010 Fairchild Semiconductor Corporation FDMS2506SDC Rev.C1 2 www.fairchildsemi.com FDMS2506SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Thermal Characteristics RθJC RθJC RθJA RθJA RθJA RθJA RθJA RθJA RθJA RθJA RθJA RθJA RθJA RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Top Source) (Bottom Drain) (Note 1a) (Note 1b) (Note 1c) (Note 1d) (Note 1e) (No.


NP88N04NUG FDMS2506SDC NP160N04TUK


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