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DSK10B

ON Semiconductor

1.0A Power Rectifier

Ordering number : EN2855E DSK10B,DSK10C, DSK10E 1.0A Power Rectifier http://onsemi.com Features • Designed for 5m...


ON Semiconductor

DSK10B

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Description
Ordering number : EN2855E DSK10B,DSK10C, DSK10E 1.0A Power Rectifier http://onsemi.com Features Designed for 5mm-pitch automatic insertion Small plastic molded structure (3mm body) Peak reverse voltage : 100 to 400V Average output current : 1.0A Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Average Recitifiedd Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRM IO IFSM Tj Tstg Conditions 50Hz sine wave, 1cycle DSK10B DSK10C 100 200 1.0 45 150 --40 to +150 DSK10E 400 Unit V A A °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Electrical Characteristics at Ta=25°C Parameter Forward Voltage Reverse Current Symbol VF IR Conditions IF=1.0A VR:At each VRM min Value typ max Unit 1.1 V 10 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Package Dimensions unit:mm(typ.) 20.0 3.0 20.0 1 0.6φ 2 cathode mark 1 : Cathode 2 : Anode 2.5φ Ordering Information Device Shipping DSK10B 500 Unit/Bag DSK10B-AT1 3,000 Unit/Box DSK10B-BT 3,000 Unit/Box DSK10C 500 Unit/Bag DSK10C-AT1 3,000 Unit/Box DSK10C-BT ...




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