N0412N
N-CHANNEL MOSFET FOR SWITCHING
Preliminary Data Sheet
R07DS0554EJ0100 Rev.1.00
Nov 07, 2011
Description
The N04...
N0412N
N-CHANNEL MOSFET FOR SWITCHING
Preliminary Data Sheet
R07DS0554EJ0100 Rev.1.00
Nov 07, 2011
Description
The N0412N is N-channel MOS Field Effect
Transistor designed for high current switching applications.
Features
Low on-state resistance RDS (on) = 3.7 mΩ MAX. (VGS = 10 V, ID = 50 A)
Low input capacitance Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V)
High current ID(DC) = ±100 A
RoHS Compliant
Ordering Information
Part No. N0412N-S19-AY ∗1
Lead Plating Pure Sn (Tin)
Packing Tube 50 p/tube
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package TO-220 1.9 g TYP.
Absolute Maximum Ratings (TA = 25°C, all terminals are connected)
Item
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature
Storage Temperature Single Avalanche Current ∗2 Single Avalanche Energy ∗2
Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS
Ratings 40 ±20
±100 ±400 119 1.5 150 −55 to +150
55 300
Unit V V A A W W °C °C A mJ
Thermal Resistance
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
1.05 83.3
°C/W °C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Starting Tch = 25°C, RG = 25 Ω, VDD = 25 V, VGS = 20 → 0 V, L = 100 μH
R07DS0554EJ0100 Rev.1.00 Nov 07, 2011
Page 1 of 6
N0412N
Chapter Title
Electrical Characteristics (TA = 25°C...