PHD63NQ03LT

PHP/PHB/PHD63NQ03LT TrenchMOS™ logic level FET Rev. 01 — 14 June 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP63NQ03LT in SOT78 (TO-220AB) PHB63NQ03LT in SOT404 (D2-PAK) PHD63NQ03LT in SOT428 (D-PAK). 1.2 Features s Logic level compatible s Low gate charge 1.3 Applications s DC to DC converters s Switched mode power supplies 1.4 Quick reference data s VDS = 30 V s Ptot = 111 W s ID = 68.9 A s RDSon ≤ 13 mΩ 2. Pinning information Table 1: Pinning - SOT78, SOT404, SOT428 simplified outline and symbol Pin Description Simplified outline 1 gate (g) 2 drain (d) [1] mb mb mb 3 source (s) mb mounting base, connected to drain (d) 2 1 3 MBK116 2 1 Top view 3 MBK091 Symbol g MBB076 d s MBK106 123 SOT78 (TO-220) SOT404 (D2-PAK) [1] It is not possible to make connection to pin 2 of the SOT404 or SOT428 packages. SOT428 (D-PAK) Philips Semiconductors PHP/PHB/PHD63NQ03LT TrenchMOS™ logic level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS VDGR VGS VGSM ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) peak gate-source voltage drain current (DC) IDM peak drain current Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175...