60V SO8 N-channel MOSFET
ZXMN6A25N8 60V SO8 N-channel enhancement mode MOSFET
Summary
V(BR)DSS 60
RDS(on) (Ω) 0.050 @ VGS=10V 0.070 @ VGS=4.5V...
Description
ZXMN6A25N8 60V SO8 N-channel enhancement mode MOSFET
Summary
V(BR)DSS 60
RDS(on) (Ω) 0.050 @ VGS=10V 0.070 @ VGS=4.5V
ID(A) 7.0
Description This new generation Trench MOSFET from Zetex features low on-resistance and fast switching, making it ideal for high efficiency power management applications.
Features Low on-resistance Fast switching speed Low gate drive SO8 package
Applications DC-DC Converters Power management functions Disconnect switches Motor control
Ordering information
Device ZXMN6A25N8TA
Reel size (inches)
7
Device marking ZXMN6A25
Tape width (mm)
12
Quantity per reel
500
D
G S
SD SD SD GD
Top view
Issue 1 - April 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
ZXMN6A25N8
Absolute maximum ratings
Parameter Drain-Source voltage
Gate-Source voltage
Continuous Drain current @ VGS= 10V; TA=25°C (b) @ VGS= 10V; TA=70°C (b) @ VGS= 10V; TA=25°C (a) @ VGS= 10V; TL=25°C (a)(d)
Pulsed Drain current (c) Continuous Source current (Body diode) (b) Pulsed Source current (Body diode) (c) Power dissipation at TA =25°C (a) Linear derating factor Power dissipation at TA =25°C (b) Linear derating factor Power dissipation at TL =25°C (d) Linear derating factor
Operating and storage temperature range
Symbol VDSS VGS ID
IDM IS ISM PD
PD PD Tj, Tstg
Limit 60
± 20
5.7 4.5 4.3 7.0 25.7
4.1
25.7
1.56 12.5 2.8 22.2 4.14 33.1 -55 to 150
Unit V V A
A A A W mW/°C W mW/°C W mW/°C °C
Thermal resistance
Parameter Junction to ambient (a) Junction to ambi...
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