ZXMN3G32DN8TA

ZXMN3G32DN8 30V SO8 dual N-channel enhancement mode MOSFET Summary V(BR)DSS 30 RDS(on) (Ω) 0.028 @ VGS= 10V 0.045 @ VGS= 4.5V ID (A) 7.1 5.6 Description This new generation Trench MOSFET from Zetex features low onresistance and fast switching speed. Features Low on-resistance 4.5V gate drive capability Fast switching bullet D1 G1 Applications DC-DC Converters Power management functions Motor Control Backlighting Ordering information DEVICE ZXMN3G32DN8TA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 500 S1 S1 G1 S2 G2 Device marking ZXMN 3G32D G2 D2 S2 D1 D1 D2 D2 Issue 1 - January 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com ZXMN3G32DN8 Absolute maximum ratings Parameter Drain source voltage Gate source voltage Continous Drain Current @ VGS=10; TA=25°C(b) @ VGS=10; TA=70°C(b) @ VGS=10; TA=25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at TA =25°C(a)(d) Linear derating factor Power dissipation at TA =25°C(a)(e) Linear derating factor Power dissipation at TA =25°C(b)(d) Linear derating factor Operating and storage temperature range Symbol VDSS VGS ID IDM IS ISM PD PD PD Tj, Tstg Limit 30 ±20 7.1 5.7 5.5 33.6 3.1 33.6 1.25 10 1.8 14 2.1 17 -55 to 150 Unit V V A A A A A A W mW/°C W mW/°C W mW/°C °C Thermal resistance Parameter Junction to ambient(a)(d) Junction to ambient(a)(e) Junction to ambient(b)(d) Junction to lead(f) Symbol R⍜JA R⍜...