Document
ZXMN3G32DN8 30V SO8 dual N-channel enhancement mode MOSFET
Summary
V(BR)DSS 30
RDS(on) (Ω) 0.028 @ VGS= 10V 0.045 @ VGS= 4.5V
ID (A) 7.1 5.6
Description
This new generation Trench MOSFET from Zetex features low onresistance and fast switching speed.
Features
• Low on-resistance • 4.5V gate drive capability • Fast switching bullet
D1 G1
Applications
• DC-DC Converters • Power management functions • Motor Control • Backlighting
Ordering information
DEVICE ZXMN3G32DN8TA
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
500
S1
S1 G1 S2 G2
Device marking
ZXMN 3G32D
G2
D2
S2
D1 D1 D2 D2
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
ZXMN3G32DN8
Absolute maximum ratings
Parameter Drain source voltage
Gate source voltage
Continous Drain Current @ VGS=10; TA=25°C(b) @ VGS=10; TA=70°C(b) @ VGS=10; TA=25°C(a)
Pulsed drain current(c)
Continuous source current (body diode)(b)
Pulsed source current (body diode)(c)
Power dissipation at TA =25°C(a)(d) Linear derating factor Power dissipation at TA =25°C(a)(e) Linear derating factor Power dissipation at TA =25°C(b)(d) Linear derating factor Operating and storage temperature range
Symbol VDSS VGS ID
IDM IS ISM PD
PD
PD
Tj, Tstg
Limit 30 ±20 7.1 5.7 5.5
33.6 3.1 33.6 1.25 10
1.8 14
2.1 17
-55 to 150
Unit V V A A A
A A A W mW/°C
W mW/°C
W mW/°C
°C
Thermal resistance
Parameter Junction to ambient(a)(d) Junction to ambient(a)(e) Junction to ambient(b)(d) Junction to lead(f)
Symbol R⍜JA R⍜JA R⍜JA R⍜JL
Limit 100 70 60 51
Unit °C/W °C/W °C/W °C/W
NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions. (b) For a device surface mounted on FR4 PCB measured at t ≤ 10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300µs - pulse width limited by maximum junction
temperature. (d) For a dual device with one active die. (e) For a device with two active die running at equal power. (f) Thermal resistance from junction to solder-point (at end of drain lead).
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
2
www.zetex.com
Thermal characteristics
ZXMN3G32DN8
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
3
www.zetex.com
ZXMN3G32DN8
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter Static Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (*)
Forward Transconductance(*)(†) Dynamic (†) Input Capacitance
Output Capacitance
Reverse Transfer Capacitance Switching (‡)(†) Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
Source-drain diode Diode Forward Voltage(*)
Symbol
V(BR)DSS IDSS IGSS VGS(th) RDS(on)
gfs
Ciss Coss Crss
td(on) tr td(off) tf Qg Qgs Qgd
VSD
Min. 30
1.0
Typ.
12
472 178 65
2.5 3.1 14 9.7 10.5 1.86 2.3 0.68
Max. Unit Conditions
0.5
100 3.0
0.028.