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ZXMN3G32DN8 Dataheets PDF



Part Number ZXMN3G32DN8
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description 30V SO8 dual N-channel MOSFET
Datasheet ZXMN3G32DN8 DatasheetZXMN3G32DN8 Datasheet (PDF)

ZXMN3G32DN8 30V SO8 dual N-channel enhancement mode MOSFET Summary V(BR)DSS 30 RDS(on) (Ω) 0.028 @ VGS= 10V 0.045 @ VGS= 4.5V ID (A) 7.1 5.6 Description This new generation Trench MOSFET from Zetex features low onresistance and fast switching speed. Features • Low on-resistance • 4.5V gate drive capability • Fast switching bullet D1 G1 Applications • DC-DC Converters • Power management functions • Motor Control • Backlighting Ordering information DEVICE ZXMN3G32DN8TA Reel size (inches.

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ZXMN3G32DN8 30V SO8 dual N-channel enhancement mode MOSFET Summary V(BR)DSS 30 RDS(on) (Ω) 0.028 @ VGS= 10V 0.045 @ VGS= 4.5V ID (A) 7.1 5.6 Description This new generation Trench MOSFET from Zetex features low onresistance and fast switching speed. Features • Low on-resistance • 4.5V gate drive capability • Fast switching bullet D1 G1 Applications • DC-DC Converters • Power management functions • Motor Control • Backlighting Ordering information DEVICE ZXMN3G32DN8TA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 500 S1 S1 G1 S2 G2 Device marking ZXMN 3G32D G2 D2 S2 D1 D1 D2 D2 Issue 1 - January 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com ZXMN3G32DN8 Absolute maximum ratings Parameter Drain source voltage Gate source voltage Continous Drain Current @ VGS=10; TA=25°C(b) @ VGS=10; TA=70°C(b) @ VGS=10; TA=25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at TA =25°C(a)(d) Linear derating factor Power dissipation at TA =25°C(a)(e) Linear derating factor Power dissipation at TA =25°C(b)(d) Linear derating factor Operating and storage temperature range Symbol VDSS VGS ID IDM IS ISM PD PD PD Tj, Tstg Limit 30 ±20 7.1 5.7 5.5 33.6 3.1 33.6 1.25 10 1.8 14 2.1 17 -55 to 150 Unit V V A A A A A A W mW/°C W mW/°C W mW/°C °C Thermal resistance Parameter Junction to ambient(a)(d) Junction to ambient(a)(e) Junction to ambient(b)(d) Junction to lead(f) Symbol R⍜JA R⍜JA R⍜JA R⍜JL Limit 100 70 60 51 Unit °C/W °C/W °C/W °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t ≤ 10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300µs - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For a device with two active die running at equal power. (f) Thermal resistance from junction to solder-point (at end of drain lead). Issue 1 - January 2008 © Zetex Semiconductors plc 2008 2 www.zetex.com Thermal characteristics ZXMN3G32DN8 Issue 1 - January 2008 © Zetex Semiconductors plc 2008 3 www.zetex.com ZXMN3G32DN8 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Static Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (*) Forward Transconductance(*)(†) Dynamic (†) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching (‡)(†) Turn-On-Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge Source-drain diode Diode Forward Voltage(*) Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Min. 30 1.0 Typ. 12 472 178 65 2.5 3.1 14 9.7 10.5 1.86 2.3 0.68 Max. Unit Conditions 0.5 100 3.0 0.028.


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