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D65NF06 Dataheets PDF



Part Number D65NF06
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STD65NF06
Datasheet D65NF06 DatasheetD65NF06 Datasheet (PDF)

STD65NF06 STP65NF06 N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET General features Type STD65NF06 STP65NF06 VDSS 60V 60V RDS(on) <14mΩ <14mΩ ■ Standard level gate drive ■ 100% avalanche tested ID 60A 60A Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical al.

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STD65NF06 STP65NF06 N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET General features Type STD65NF06 STP65NF06 VDSS 60V 60V RDS(on) <14mΩ <14mΩ ■ Standard level gate drive ■ 100% avalanche tested ID 60A 60A Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ■ Switching application 3 1 DPAK 3 2 1 TO-220 Internal schematic diagram Order codes Part number STD65NF06 STP65NF06 Marking D65NF06 P65NF06 Package DPAK TO-220 Packaging Tape & reel Tube July 2006 Rev 1 1/14 www.st.com 14 Contents Contents STD65NF06 - STP65NF06 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STD65NF06 - STP65NF06 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0) VGS Gate- source voltage ID Drain current (continuous) at TC = 25°C ID IDM(1) Drain current (continuous) at TC = 100°C Drain current (pulsed) Ptot Total dissipation at TC = 25°C Derating Factor dv/dt (2) Peak diode recovery voltage slope EAS (3) Single pulse avalanche energy Tstg Storage temperature Tj Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤60A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX 3. Starting Tj = 25 °C, ID = 30A, VDD = 40V Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Rthj-pcb(1) Thermal resistance junction-pcb max Tl Maximum lead temperature for soldering purpose (for 10sec. 1.6mm from case) 1. When mounted on FR-4 of 1 inch², 2 oz Cu Value 60 ± 20 60 42 240 110 0.73 10 390 -55 to 175 TO-220 DPAK 1.36 62.5 -300 -50 -- Unit V V A A A W W/°C V/ns mJ °C Unit °C/W °C/W °C/W °C/W 3/14 Electrical characteristics 2 Electrical characteristics STD65NF06 - STP65NF06 (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter Drain-source V(BR)DSS breakdown voltage IDSS IGSS VGS(th) RDS(on) Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions Min. Typ. Max. Unit ID = 250µA, VGS =0 60 VDS = Max rating VDS = Max rating,@125°C VGS = ± 20V VDS = VGS, ID = 250µA 2 VGS = 10V, ID = 30A V 1 µA 10 µA ±100 nA 4V 11.5 14 mΩ Table 4. Dynamic Symbol Parameter Test conditions gfs (1) Forward transconductance VDS= 25V, ID = 30A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 30V, ID = 30A RG = 4.7Ω VGS = 10V (see Figure 12) Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDD = 30V, ID = 60A, VGS = 10V, RG = 4.7Ω (see Figure 13) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Min. Typ. Max. Unit 50 S 1700 400 135 15 60 40 16 54 10 20 75 pF pF pF ns ns ns ns nC nC nC 4/14 STD65NF06 - STP65NF06 Electrical characteristics Table 5. Source drain diode Symbol Parameter Test conditions Min. ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 60A, VGS = 0 trr Qrr IRRM Reverse recovery time ISD = 60A, di/dt = 100A/µs, Reverse recovery charge VDD = 25V, Tj = 150°C Reverse recovery current (see Figure 14) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Typ. 70 150 4.4 Max. Unit 60 A 240 A 1.5 V ns nC A 5/14 Electrical characteristics STD65NF06 - STP65NF06 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Normalized breakdown voltage temperature Figure 6. Static drain-source on resistance 6/14 STD65NF06 - STP65NF06 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage Figure 10. Normal.


AT8303 D65NF06 TR-3025-PC


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