Document
STD65NF06 STP65NF06
N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET
General features
Type STD65NF06 STP65NF06
VDSS 60V 60V
RDS(on) <14mΩ <14mΩ
■ Standard level gate drive ■ 100% avalanche tested
ID 60A 60A
Description
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Applications
■ Switching application
3 1
DPAK
3 2 1
TO-220
Internal schematic diagram
Order codes
Part number STD65NF06 STP65NF06
Marking D65NF06 P65NF06
Package DPAK TO-220
Packaging Tape & reel
Tube
July 2006
Rev 1
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www.st.com
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Contents
Contents
STD65NF06 - STP65NF06
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STD65NF06 - STP65NF06
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate- source voltage
ID Drain current (continuous) at TC = 25°C
ID IDM(1)
Drain current (continuous) at TC = 100°C Drain current (pulsed)
Ptot Total dissipation at TC = 25°C
Derating Factor
dv/dt (2) Peak diode recovery voltage slope
EAS (3)
Single pulse avalanche energy
Tstg Storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD ≤60A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX 3. Starting Tj = 25 °C, ID = 30A, VDD = 40V
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max Rthj-pcb(1) Thermal resistance junction-pcb max
Tl Maximum lead temperature for soldering purpose (for 10sec. 1.6mm from case)
1. When mounted on FR-4 of 1 inch², 2 oz Cu
Value 60 ± 20 60 42 240 110 0.73 10 390
-55 to 175
TO-220
DPAK
1.36 62.5
-300
-50 --
Unit V V A A A W
W/°C V/ns mJ °C
Unit °C/W °C/W °C/W °C/W
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Electrical characteristics
2 Electrical characteristics
STD65NF06 - STP65NF06
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source V(BR)DSS breakdown voltage
IDSS
IGSS VGS(th) RDS(on)
Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage
Static drain-source on resistance
Test conditions
Min. Typ. Max. Unit
ID = 250µA, VGS =0
60
VDS = Max rating VDS = Max rating,@125°C
VGS = ± 20V
VDS = VGS, ID = 250µA
2
VGS = 10V, ID = 30A
V 1 µA 10 µA ±100 nA 4V 11.5 14 mΩ
Table 4. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Forward transconductance
VDS= 25V, ID = 30A
Ciss Coss Crss
Input capacitance Output capacitance Reverse transfer capacitance
VDS = 25V, f = 1MHz, VGS = 0
td(on) tr
td(off) tf
Turn-on delay time Rise time Turn-off delay time Fall time
VDD = 30V, ID = 30A RG = 4.7Ω VGS = 10V (see Figure 12)
Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge
VDD = 30V, ID = 60A, VGS = 10V, RG = 4.7Ω (see Figure 13)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min. Typ. Max. Unit 50 S
1700 400 135
15 60 40 16
54 10 20
75
pF pF pF
ns ns ns ns
nC nC nC
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STD65NF06 - STP65NF06
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
Min.
ISD ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2) Forward on voltage
ISD = 60A, VGS = 0
trr Qrr IRRM
Reverse recovery time ISD = 60A, di/dt = 100A/µs, Reverse recovery charge VDD = 25V, Tj = 150°C Reverse recovery current (see Figure 14)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Typ.
70 150 4.4
Max. Unit
60 A 240 A
1.5 V ns nC A
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Electrical characteristics
STD65NF06 - STP65NF06
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
Figure 3. Output characterisics
Figure 4. Transfer characteristics
Figure 5. Normalized breakdown voltage temperature
Figure 6. Static drain-source on resistance
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Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normal.