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P3NA90FI Dataheets PDF



Part Number P3NA90FI
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STP3NA90FI
Datasheet P3NA90FI DatasheetP3NA90FI Datasheet (PDF)

STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST P3NA 90 ST P3NA 90FI VDSS 900 V 900 V RDS(o n) < 5.3 Ω < 5.3 Ω ID 3A 1.9 A s TYPICAL RDS(on) = 4.4 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS F.

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STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST P3NA 90 ST P3NA 90FI VDSS 900 V 900 V RDS(o n) < 5.3 Ω < 5.3 Ω ID 3A 1.9 A s TYPICAL RDS(on) = 4.4 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE 3 2 1 TO-220 3 2 1 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS VD GR VGS ID ID IDM(•) Ptot Drain-Source Voltage (Vgs = 0) Drain-Gate Voltage (Rgs = 20 KΩ) Gate-Source Voltage Drain-Current (continuous) at Tc = 25oC Drain-Current (continuous) at Tc = 100oC Drain-Current (Pulsed) Tot al Dissipation at Tc = 25oC Derating Factor VISO Insulation W ithst and Voltage (DC) Tstg Storage T emperature Tj Max Operating Junction Temperature (•)Pulse width limited by safe operating area March 1996 Value STP3NA90 S TP3NA 90F I 900 900 ± 30 3 1.9 2 1.2 12 12 100 40 1.25 0 .3 2 - 2000 -65 to 150 150 Unit V V V A A A W W/oC V oC oC 1/6 STP3NA90/FI THERMAL DATA Rt hj-ca se Rt hj- amb Rthc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO 220 0.8 IS OW ATT 220 3. 12 62.5 0.5 300 oC/ W oC/ W oC/ W oC AVALANCHE CHARACTERISTICS Symb ol IAR E AS EAR IAR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR, VDD = 50 V) Repetitive Avalanche Energy (pulse width limited by Tj max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 oC, pulse width limited by Tj max, δ < 1%) Max Value 3 45 2 2 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V(BR)DSS IDSS IGSS P a ram et er Test Conditions Dr ain - s o ur c e Breakdown Voltage ID = 250 µA VGS = 0 Zero Gate Voltage VDS = Max Rating Drain Current (VGS = 0) VDS = Max Rating x 0. 8 Tc = 125 oC Gate-Source Leakage VGS = ± 30 V Current (VDS = 0) Min. 900 Typ . M a x. 250 1000 ± 100 Unit V µA µA mA ON (∗) Symb ol V GS(th ) RDS( o n ) ID(o n) P a ram et er Test Conditions Gate T hreshold Voltage VDS = VGS ID = 250 µA St atic Drain-source On VGS = 10 V ID = 1. 5 A Re s is ta nc e VGS = 10 V ID = 1.5 A Tc = 100 oC On State Drain Current VDS > ID(on) x RDS(on)max VGS = 10 V Min. 2.25 3 Typ . 3 4.4 M a x. 3.75 5.3 10.6 Unit V Ω Ω A DYNAMIC Symb ol gfs (∗) Ciss Coss Crss P a ram et er Forward T r ans c on duc ta nc e Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max ID = 1.5 A Min. 1.5 Typ . 2.8 M a x. Unit S VDS = 25 V f = 1 MHz VGS = 0 690 900 80 105 20 30 pF pF pF 2/6 STP3NA90/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol td(on) tr (di/ dt) on Qg Qgs Qgd P a ram et er Turn-on T ime Rise Time Turn-on Current Slope Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 450 V RG = 4.7 Ω ID = 1.5 A VGS = 10 V VDD = 720 V RG = 47 Ω VDD = 720 V ID =3 A ID = 3 A VGS = 10 V VGS = 10 V Min. Typ . 10 10 360 35 6 14 M a x. 15 15 50 Unit ns ns A/µs nC nC nC SWITCHING OFF Symb ol tr(Vo f f) tf tc P a ram et er Off-voltage Rise Time Fall Time Cross-over T ime Test Conditions VDD = 720 V RG = 4.7 Ω ID = 3 A VGS = 10 V Min. Typ . 11 8 19 M a x. 10 13 26 Unit ns ns ns SOURCE DRAIN DIODE Symb ol P a ram et er Test Conditions ISD ISDM (•) Source-drain Current Source-drain Current ( pu ls ed) VSD (∗) Forward O n Volt age ISD = 3 A trr Reverse Recovery ISD = 3 A Time Qrr Reverse Recovery Charge VDD = 100 V IRRM Reverse Recovery Cu r re nt (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area VGS = 0 di/dt = 100 A/µs Tj = 150 oC Min. Typ . 950 14.2 30 M a x. 3 12 1.6 Unit A A V ns µC A 3/6 STP3NA90/FI DIM. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.4 10.0 13.0 2.65 15.25 6.2 3.5 3.75 TO-220 MECHANICAL DATA mm TYP. 1.27 16.4 MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.7 10.40 14.0 2.95 15.75 6.6 3.93 3.85 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.511 0.104 0.600 0.244 0.137 0.147 inch TYP. 0.050 0.645 MAX. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.551 0.116 0.620 0.260 0.154 0.151 D E A C D1 L2 G1 G H2 F2 F1 Dia. L5 L7 L6 L9 L4 F P011C 4/6 STP3NA90/FI DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Ø ISOWATT220 MECHANICAL DATA MIN. 4.4 2.5 2.5 0.4 0.75 1.15 1.15 4.95 2.4 10 28.6 9.8 15.9 9 3 mm TYP. 16 MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 1.


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