CES2301
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-20V, -2.8A, RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package.
D
DS G
SOT-23
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
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