CES2321

CES2321 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -3.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 62mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. D DS G SOT-23 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID -3.8 IDM -15.2 Maximum Power Dissipation PD 1.25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units V V A A W C Units C/W Details are subject to change without notice . 1 Rev 4. 2012.Jan http://www.cet-mos.com CES2321 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V -20 -1 100 -100 V µA nA nA Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d VGS(th) RDS(on) VGS = VDS, ID = -250µA -0.4 -1.0 V VGS = -4.5V, ID = -2.4A 39 55 mΩ VGS = -2.5V, ID = -2.0A 47 62 mΩ Input Capacitance Output Capacitance Revers...