CEP35P10/CEB35P10 CEF35P10
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-100V, -32A, RDS(ON) =76mΩ @VGS...
CEP35P10/CEB35P10 CEF35P10
P-Channel Enhancement Mode Field Effect
Transistor
FEATURES
-100V, -32A, RDS(ON) =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package.
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -100
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID -32 IDM -128
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
125 0.83
Single Pulsed Avalanche Energy e
EAS 450
Single Pulsed Avalanche Current e
IAS 30
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.2 62.5
Units V V A A W
W/ C mJ A
C
Units C/W C/W
Specification and data are subject to change without notice . 1
Rev 1. 2009.July http://www.cetsemi.com
CEP35P10/CEB35P10 CEF35P10
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = -250µA VDS = -100V, VGS = 0V VGS = 20V, VDS = 0V VG...