HY4903P/B
N-Channel Enhancement Mode MOSFET
Features
30V/290A
RDS(ON)= 1.6mΩ (typ.) @ VGS=10V
100% EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Halogen - Free Device Available
Pin Description
DS G TO-220FB-3L
DS G TO-263-2L
Applications
High Frequency Synchronous Buck
C...
