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CEH2608
Dual MOSFET
Description
CEH2608 Dual Enhancement Mode Field Effect
Transistor
(N Channel) PRELIMINARY FEATURES 20V, 3.8A, RDS(ON) = 50mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. RDS(ON) = 100mΩ @VGS = 1.8V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. 4 5 6 3 2...
CET
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