CEH2288
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 5.2A , RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = ...
CEH2288
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
20V, 5.2A , RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable. Lead-free plating ; RoHS compliant. TSOP-6 package.
4 5 6
3 2 1 TSOP-6
G1(6)
D1(2)
G2(4) S1(1)
D2(5) S2(3)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 20
VGS ±12
Drain Current-Continuous Drain Current-Pulsed a
ID 5.2 IDM 20
Maximum Power Dissipation
PD 1.14
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 110
Units V V A A W C
Units C/W
Details are subject to change without notice .
1
Rev 3. 2013.April http://www.cetsemi.com
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d
Symbol
Test Condition
BVDSS IDSS IGSSF IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V
VGS = VDS, ID = 250µA VGS = 4.5V, ID = 4.5A VGS = 2.5V, ID = 3.5A
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d
Ciss Coss Crss
...