CEG8208

CEG8208 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.5A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. ESD Protected: HBM 2000 V G2 S2 S2 D TSSOP-8 G1 S1 S1 D D *1K G1 *1K G2 S1 *Typical value by design D1 S1 2 S1 3 G1 4 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID 6.5 IDM 25 Maximum Power Dissipation PD 1.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 D S2 8D 7 S2 6 S2 5 G2 Units V V A A W C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 83 Units C/W Details are subject to change without notice . 1 Rev 3. 2006.Aug http://www.cet-mos.com CEG8208 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Symbol Test Condition BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = 250µA VGS = 4.5V, ID...