Document
SUP/SUB75N08-10
Vishay Siliconix
N-Channel 75-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
75
rDS(on) (W)
0.010
ID (A)
75a
TO-220AB
TO-263
DRAIN connected to TAB
GD S Top View SUP75N08-10
G DS Top View SUB75N08-10
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
TC = 25_C TC = 125_C
VGS ID
"20 75a 55
Pulsed Drain Current
IDM 240
Avalanche Current Repetitive Avalanche Energyb
Power Dissipation
L = 0.1 mH TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)d
IAR EAR
PD
60 280 187c 3.7
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Junction-to-Ambient Junction-to-Case
Parameter
PCB Mount (TO-263)d Free Air (TO-220AB)
Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70263 S-57253—Rev. B, 24-Feb-98
Symbol
RthJA RthJC
Limit
40 62.5 0.8
Unit
_C/W
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SUP/SUB75N08-10
Vishay Siliconix
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 75 V, VGS = 0 V VDS = 75 V, VGS = 0 V, TJ = 125_C VDS = 75 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C VDS = 15 V, ID = 30 A
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 75 A
VDD = 30 V, RL = 0.47 W ID ^ 75 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge
IS ISM VSD trr IRM(REC) Qrr
IF = 75 A , VGS = 0 V IF = 75 A, di/dt = 100 A/ms
Notes
a. Pulse test: pulse width v 300 msec, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
Min Typ Max Unit
75 V
2.0 3.5 4.5
"100
nA
1
50 mA
150
120 A
0.0087 0.010
0.017
W
0.021
30 S
4800 910 270 85 31 24 20 95 65 20
120
40 200 120 60
pF nC ns
75 A
240
1.0 1.3
V
80 120 ns
7 9A
0.28 0.54 mC
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Document Number: 70263 S-57253—Rev. B, 24-Feb-98
SUP/SUB75N08-10
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
I D – Drain Current (A)
Output Characteristics
250
VGS = 10 V
9V
8V
200 7 V
150
100 50 0 0
120 100
80 60
6V
4V 5V
2468 VDS – Drain-to-Source Voltage (V)
Transconductance
10
TC = –55_C
25_C 125_C
I D – Drain Current (A)
Transfer Characteristics 200
150
100
50
0 0
0.012 0.010 0.008 0.006
TC = 125_C 25_C
–55_C
246 VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 10 V VGS = 20 V
8
rDS(on) – On-Resistance ( Ω )
g fs – Transconductance (S)
40 0.004
20 0.002
C – Capacitance (pF)
0 0
7000
20 40 60 80 VGS – Gate-to-Source Voltage (V) Capacitance
6000 5000
Ciss
4000
3000
2000 1000
Crss
Coss
0 0 10 20 30 40 50
VDS – Drain-to-Source Voltage (V)
100 60
V GS – Gate-to-Source Voltage (V)
0 0 20 40 60 80
ID – Drain Current (A) Gate Charge
20
16
VDS = 30 V ID = 75 A
12
100
8
4
0 0 25 50 75 100 125 150 175
Qg – Total Gate Charge (nC)
Document Number: 70263 S-57253—Rev. B, 24-Feb-98
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SUP/SUB75N08-10
Vishay Siliconix
I S – Source Current (A)
rDS(on) – On-Resistance ( Ω ) (Normalized)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature 2.5
VGS = 10 V ID = 30 A 2.0
100
1.5 10
1.0
Source-Drain Diode Forward Voltage
TJ = 150_C
TJ = 25_C
0.5
0 –50 –25
0 25 50 75 100 125 150 175 TJ – Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche and Drain Current vs. Case Temperature
100
80
I D – Drain Current (A)
60
40
20
I D – Drain Current (A)
1 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V)
500 Safe Operating Area Limited
100 by rDS(on)
10
1 TC = 25_C Single Pulse
10 ms 100 ms
1 ms
10 ms 100 ms dc
0 0 25 50 75 100 125 150 175
TC – Case Temperature (_C)
0.1 0.1
1 10 VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case 2
1 Duty Cycle = 0.5
100
Normalized Effective Transient Thermal Impedance
0.2
0.1 0.1 0.05
0.02
0.01 10–5
Single Pulse 10–4
10–3
10–2
Square Wave Pulse Duration (sec)
10–1
13
.