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SUP75N08-10 Dataheets PDF



Part Number SUP75N08-10
Manufacturers Vishay
Logo Vishay
Description N-Channel MOSFET
Datasheet SUP75N08-10 DatasheetSUP75N08-10 Datasheet (PDF)

SUP/SUB75N08-10 Vishay Siliconix N-Channel 75-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (W) 0.010 ID (A) 75a TO-220AB TO-263 DRAIN connected to TAB GD S Top View SUP75N08-10 G DS Top View SUB75N08-10 D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Gate-Source Voltage Continuous Drain Current (TJ = 175_C) TC = 25_C TC = 125_C VGS ID "20 75a 55 Pulsed Drain Current IDM 240 Avalanche Current Repetitive.

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SUP/SUB75N08-10 Vishay Siliconix N-Channel 75-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (W) 0.010 ID (A) 75a TO-220AB TO-263 DRAIN connected to TAB GD S Top View SUP75N08-10 G DS Top View SUB75N08-10 D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Gate-Source Voltage Continuous Drain Current (TJ = 175_C) TC = 25_C TC = 125_C VGS ID "20 75a 55 Pulsed Drain Current IDM 240 Avalanche Current Repetitive Avalanche Energyb Power Dissipation L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d IAR EAR PD 60 280 187c 3.7 Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Junction-to-Ambient Junction-to-Case Parameter PCB Mount (TO-263)d Free Air (TO-220AB) Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 70263 S-57253—Rev. B, 24-Feb-98 Symbol RthJA RthJC Limit 40 62.5 0.8 Unit _C/W www.vishay.com S FaxBack 408-970-5600 2-1 SUP/SUB75N08-10 Vishay Siliconix Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 75 V, VGS = 0 V VDS = 75 V, VGS = 0 V, TJ = 125_C VDS = 75 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C VDS = 15 V, ID = 30 A Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 75 A VDD = 30 V, RL = 0.47 W ID ^ 75 A, VGEN = 10 V, RG = 2.5 W Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 75 A , VGS = 0 V IF = 75 A, di/dt = 100 A/ms Notes a. Pulse test: pulse width v 300 msec, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Min Typ Max Unit 75 V 2.0 3.5 4.5 "100 nA 1 50 mA 150 120 A 0.0087 0.010 0.017 W 0.021 30 S 4800 910 270 85 31 24 20 95 65 20 120 40 200 120 60 pF nC ns 75 A 240 1.0 1.3 V 80 120 ns 7 9A 0.28 0.54 mC www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70263 S-57253—Rev. B, 24-Feb-98 SUP/SUB75N08-10 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) I D – Drain Current (A) Output Characteristics 250 VGS = 10 V 9V 8V 200 7 V 150 100 50 0 0 120 100 80 60 6V 4V 5V 2468 VDS – Drain-to-Source Voltage (V) Transconductance 10 TC = –55_C 25_C 125_C I D – Drain Current (A) Transfer Characteristics 200 150 100 50 0 0 0.012 0.010 0.008 0.006 TC = 125_C 25_C –55_C 246 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current VGS = 10 V VGS = 20 V 8 rDS(on) – On-Resistance ( Ω ) g fs – Transconductance (S) 40 0.004 20 0.002 C – Capacitance (pF) 0 0 7000 20 40 60 80 VGS – Gate-to-Source Voltage (V) Capacitance 6000 5000 Ciss 4000 3000 2000 1000 Crss Coss 0 0 10 20 30 40 50 VDS – Drain-to-Source Voltage (V) 100 60 V GS – Gate-to-Source Voltage (V) 0 0 20 40 60 80 ID – Drain Current (A) Gate Charge 20 16 VDS = 30 V ID = 75 A 12 100 8 4 0 0 25 50 75 100 125 150 175 Qg – Total Gate Charge (nC) Document Number: 70263 S-57253—Rev. B, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 2-3 SUP/SUB75N08-10 Vishay Siliconix I S – Source Current (A) rDS(on) – On-Resistance ( Ω ) (Normalized) TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A 2.0 100 1.5 10 1.0 Source-Drain Diode Forward Voltage TJ = 150_C TJ = 25_C 0.5 0 –50 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature (_C) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 100 80 I D – Drain Current (A) 60 40 20 I D – Drain Current (A) 1 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) 500 Safe Operating Area Limited 100 by rDS(on) 10 1 TC = 25_C Single Pulse 10 ms 100 ms 1 ms 10 ms 100 ms dc 0 0 25 50 75 100 125 150 175 TC – Case Temperature (_C) 0.1 0.1 1 10 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 100 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 0.01 10–5 Single Pulse 10–4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 13 .


2SC3402 SUP75N08-10 MDF-SB1153


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