SMK1265F

Semiconductor SWITCHING REGULATOR APPLICATIONS Features High Voltage: BVDSS=650V(Min.) Low Crss : Crss=14.6pF(Typ.) Low gate charge : Qg=41nC(Typ.) Low RDS(on) :RDS(on)=0.8Ω(Max.) Ordering Information Type NO. SMK1265F Marking SMK1265 PIN Connections SMK1265F Advanced Power MOSFET Package Code TO-220F-3L D G S 1. Gate 2. Drain 3. Source KSD-T0O039-000 1 SMK1265F Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC)* Drain current (Pulsed)* Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy ② ② ① ① Junction temperature Storage temperature range * Limited by maximum junction temperature Symbol VDSS VGSS (Tc=25℃) ID (Tc=100℃) IDM PD IAS EAS IAR EAR TJ Tstg Rating 650 ±30 12 4.5 48 45 12 273 12 7.6 150 -55~150 Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-a) Typ. - Max 2.7 62.5 (Tc=25°C) Unit V V A A A W A mJ A mJ °C Unit ℃/W KSD-T0O039-000 2 SMK1265F Electrical Characteristics Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance ④ Forward transfer conductance ④ Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Symbol BVDSS VGS(th)...