KGF50N60KDA

SEMICONDUCTOR TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand Times 10us Extremely enhanced avalanche capability KGF50N60KDA MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate-Emitter Voltage VGES 20 V Collector Current @Tc=25 @Tc=100 100 A IC 50 A Pulsed Collector Current Diode Continuous Forward Current @Tc=100 Diode Maximum Forward Current ICM* 150 A IF 50 A IFM 100 A Maximum Power Dissipation @Tc=25 @Tc=100 277 W PD 111 W Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 to + 150 *Repetitive rating : Pulse width limited by max. junction temperature THERMAL CHARACTERISTIC CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) Thermal Resistance, Junction to Ambient SYMBOL Rt h JC Rt h JC Rt h JA MAX. 0.45 1.0 40 UNIT /W /W /W E C G 2013. 8. 19 Revision No : 2 1/8 KGF50N60KDA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Static Collector-Emitter Breakdown Voltage Collector Cut-off Current BVCES ICES VGE=0V , IC=250 A VGE=0V, VCE=600V Gate Leakage Current Gate Threshold Voltage Collector-Emitte...