Huajing Discrete Devices Silicon N-Channel Power MOSFET
General Description:
CS2N65 A8, the silicon N-channel Enhanced
...
Huajing Discrete Devices Silicon N-Channel Power MOSFET
General Description:
CS2N65 A8, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The
transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard..
Features:
l Fast Switching l Low ON Resistance(Rdson≤5Ω) l Low Gate Charge (Typical Data:9nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
VDSS ID PD (TC=25℃) RDS(ON)Typ
○R
CS2N65 A8
650 V 2A 35 W 3.9 Ω
Symbol
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ,Tstg TL
Parameter
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range MaximumTemperature for Soldering
Rating
650 2.0 1.45 8 ±30 68 6.4 1.1 5 35 0.28 150,–55 to 150 300
Units
V A A A V mJ mJ A V/ns W W/℃ ℃ ℃
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2012
Huajing Discrete Devices
○R CS2N65 A8
Electrical Characte...