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STP45N10F7

STMicroelectronics

N-CHANNEL POWER MOSFET

STD45N10F7, STI45N10F7, STP45N10F7 N-channel 100 V, 0.0145 Ω typ., 45 A, STripFET™ VII DeepGATE™ Power MOSFETs in DPAK, ...


STMicroelectronics

STP45N10F7

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Description
STD45N10F7, STI45N10F7, STP45N10F7 N-channel 100 V, 0.0145 Ω typ., 45 A, STripFET™ VII DeepGATE™ Power MOSFETs in DPAK, I2PAK and TO-220 packages Datasheet - production data TAB 3 1 DPAK TAB TAB 123 I2PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram $ 4!" ' Features Order codes STD45N10F7 STI45N10F7 STP45N10F7 VDS RDS(on) max.(1) 100 V 0.018 Ω 1. @ VGS = 10 V Ultra low on-resistance 100% avalanche tested ID 45 A PTOT 60 W Applications Switching applications Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 !-V Order codes STD45N10F7 STI45N10F7 STP45N10F7 Table 1. Device summary Marking Package 45N10F7 DPAK I2PAK TO-220 Packaging Tape and reel Tube October 2013 This is information on a product in full production. DocID024455 Rev 1 1/19 www.st.com Contents Contents STD45N10F7, STI45N10F7, STP45N10F7 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . ....




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