B1393

Power Transistors 2SB1393, 2SB1393A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1985 and 2SD1985A s Features q Satisfactory linearity of foward current transfer ratio hFE q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to 2SB1393 base voltage 2SB1393A VCBO –60 –80 V Collector to 2SB1393 emitter voltage 2SB1393A VCEO –60 –80 V Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VEBO ICP IC PC –5 –5 –3 25 2.0 V A A W Junction temperature Storage temperature Tj 150 ˚C Tstg –55 to +150 ˚C s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions Collector cutoff 2SB1393 current 2SB1393A Collector cutoff 2SB1393 current 2SB1393A Emitter cutoff current Collector to emitter 2SB1393 voltage 2SB1393A Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time ICEO ICES IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf VCE = –30V, IB = 0 VCE = –60V, IB = 0 VCE = –60V, VBE = 0 VCE = –80V, VBE = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –4V, IC = –1A VCE = –4V, IC = –3A VCE = –4V, IC = –3A IC = –3A, IB = – 0.375A VCE = –5V, IC = – 0.1A, f = 1MHz IC = –1A, IB1 = – 0.1A, IB2 = 0.1A, VCC = –50V *...