CEA3252
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 5A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package.
D
D SOT-89
S D G
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter...
