CEV2306
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 2A, RDS(ON) = 65mΩ @VGS = 4.5V. RDS(ON) = 80mΩ @VGS = 2.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-323 package.
D
DS G
SOT-323(SC-70)
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
S...
