CES2306
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 3.6A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 70...
CES2306
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
20V, 3.6A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. RDS(ON) = 100mΩ @VGS = 1.8V.
High dense cell design for extremely low RDS(ON). Lead-free plating ; RoHS compliant. Rugged and reliable. SOT-23 package.
DS G
SOT-23
G
D S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 20
VGS ±8
Drain Current-Continuous Drain Current-Pulsed a
ID 3.6 IDM 14
Maximum Power Dissipation
PD 1.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 100
Units V V A A W C
Units C/W
Details are subject to change without notice
1
Rev 2. 2011.Nov http://www.cet-mos.com
CES2306
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 8V, VDS = 0V VGS = -8V, VDS = 0V
20
1 100 -100
V µA nA nA
Gate Threshold Voltage Static Drain-Source On-Resistance
Dynamic Characteristics d
VGS(th) RDS(on)
VGS = VDS, ID = 250µA 0.4
1V
VGS = 4.5V, ID = 3.6A
43 60 mΩ
VGS = 2.5V, ID = 3.1A VGS = 1.8V, ID = 1.0A
55 70 mΩ 70 100 mΩ
Input C...