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CEF1186 Dataheets PDF



Part Number CEF1186
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEF1186 DatasheetCEF1186 Datasheet (PDF)

CEP1186/CEB1186 CEF1186 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1186 CEB1186 CEF1186 VDSS 800V RDS(ON) 2.3Ω ID 6A @VGS 10V 800V 2.3Ω 6A 10V 800V 2.3Ω 6A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage.

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CEP1186/CEB1186 CEF1186 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1186 CEB1186 CEF1186 VDSS 800V RDS(ON) 2.3Ω ID 6A @VGS 10V 800V 2.3Ω 6A 10V 800V 2.3Ω 6A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 VDS VGS ID IDM e PD 800 ±30 6 24 166 1.3 EAS 9.4 IAS 2.5 TO-220F 6d 24d 50 0.4 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.75 62.5 2.5 65 Units V V A A W W/ C mJ A C Units C/W C/W . Details are subject to change without notice . 1 Rev 2. 2012.Feb http://www.cet-mos.com CEP1186/CEB1186 CEF1186 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS =800V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 2.5A Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 300V, ID =5A, VGS = 10V, RGEN = 25Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 480V,ID = 5A, VGS = 10V Qgd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b ISf VSDg Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 3.2A . g.Full package VSD test condition IS = 3.2A . h.L = 3mH, IAS =2.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C VGS = 0V, IS = 5A Min 800 2 Typ 1.9 958 152 19 25 46 94 24 29.4 5 11 Max Units 1 100 -100 V µA nA nA 4V 2.3 Ω pF pF pF 53 ns 95 ns 192 ns 56 ns 41.8 nC nC nC 5A 1.4 V 2 ID, Drain Current (A) C, Capacitance (pF) 12 10 VGS=10,9,8,7V 8 VGS=6V 6 4 VGS=5V 2 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage (V) Fi.


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