Document
CEP1186/CEB1186 CEF1186
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP1186 CEB1186 CEF1186
VDSS 800V
RDS(ON) 2.3Ω
ID 6A
@VGS 10V
800V 2.3Ω 6A 10V
800V 2.3Ω
6A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h
Tc = 25 C unless otherwise noted
Symbol
Limit TO-220/263
VDS VGS ID IDM e
PD
800
±30
6 24 166
1.3
EAS 9.4
IAS 2.5
TO-220F
6d 24d 50 0.4
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 0.75 62.5
2.5 65
Units
V V A A W W/ C mJ A C
Units C/W C/W
. Details are subject to change without notice .
1
Rev 2. 2012.Feb http://www.cet-mos.com
CEP1186/CEB1186 CEF1186
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS =800V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V
Gate Threshold Voltage Static Drain-Source On-Resistance
VGS(th) RDS(on)
VGS = VDS, ID = 250µA VGS = 10V, ID = 2.5A
Dynamic Characteristics c
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
Ciss Coss Crss
VDS = 25V, VGS = 0V, f = 1.0 MHz
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 300V, ID =5A, VGS = 10V, RGEN = 25Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS = 480V,ID = 5A, VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b
ISf VSDg
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 3.2A . g.Full package VSD test condition IS = 3.2A . h.L = 3mH, IAS =2.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
VGS = 0V, IS = 5A
Min 800
2
Typ
1.9
958 152 19 25 46 94 24 29.4
5 11
Max Units
1 100 -100
V µA nA nA
4V 2.3 Ω
pF pF pF
53 ns 95 ns 192 ns 56 ns 41.8 nC
nC nC
5A 1.4 V
2
ID, Drain Current (A)
C, Capacitance (pF)
12 10 VGS=10,9,8,7V
8 VGS=6V
6
4 VGS=5V 2
0 0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V) Fi.