CEP04N7G/CEB04N7G CEF04N7G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP04N7G CEB04N7G CEF04N7G...
CEP04N7G/CEB04N7G CEF04N7G
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
Type CEP04N7G CEB04N7G CEF04N7G
VDSS 700V 700V
700V
RDS(ON) 3.3Ω 3.3Ω
3.3Ω
ID 4A 4A 4A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM e
PD
700
±30
4 16 84
0.67
4d 16 d 35
0.28
Single Pulsed Avalanche Energy f
EAS 43
Single Pulsed Avalanche Current f
IAS 3.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.5 62.5
3.6 65
Units
V V A A W W/ C mJ A C
Units C/W C/W
Details are subject to change without notice .
1
Rev 3. 2009.July http://www.cet-mos.com
CEP04N7G/CEB04N7G CEF04N7G
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS ...