CEP04N7G

CEP04N7G/CEB04N7G CEF04N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP04N7G CEB04N7G CEF04N7G VDSS 700V 700V 700V RDS(ON) 3.3Ω 3.3Ω 3.3Ω ID 4A 4A 4A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 700 ±30 4 16 84 0.67 4d 16 d 35 0.28 Single Pulsed Avalanche Energy f EAS 43 Single Pulsed Avalanche Current f IAS 3.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.5 62.5 3.6 65 Units V V A A W W/ C mJ A C Units C/W C/W Details are subject to change without notice . 1 Rev 3. 2009.July http://www.cet-mos.com CEP04N7G/CEB04N7G CEF04N7G Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS ...