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CEB01N65 Dataheets PDF



Part Number CEB01N65
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEB01N65 DatasheetCEB01N65 Datasheet (PDF)

CEP01N65/CEB01N65 CEF01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP01N65 CEB01N65 CEF01N65 VDSS 650V 650V 650V RDS(ON) 10.5Ω 10.5Ω 10.5Ω ID 1.3A 1.3A 1.3A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no.

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CEP01N65/CEB01N65 CEF01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP01N65 CEB01N65 CEF01N65 VDSS 650V 650V 650V RDS(ON) 10.5Ω 10.5Ω 10.5Ω ID 1.3A 1.3A 1.3A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 650 ±30 1.3 5.2 41 0.33 1.3 d 5.2 d 27 0.22 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3 62.5 4.5 65 Units V V A A W W/ C C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2007.March http://www.cet-mos.com CEP01N65/CEB01N65 CEF01N65 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 0.6A Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c gFS Ciss Coss Crss VDS = 10V, ID = 0.6A VDS = 25V, VGS = 0V, f = 1.0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 300V, ID = 1.3A, VGS = 10V, RGEN =4.7Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 480V, ID = 1.3A, VGS = 10V Qgd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS f Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 0.6A g Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 1A . g.Full package VSD test condition IS = 1A . Min 650 2.5 Typ 8.5 0.8 205 45 20 14.3 14.6 22.9 16.6 5.7 1.9 2.4 Max Units V 25 µA 10 uA -10 uA 4.5 V 10.5 Ω S pF pF pF 28.6 29.2 45.8 33.2 7.5 ns ns ns ns nC nC nC 1.3 A 1.5 V 4 2 ID, Drain Current (A) C, Capacitance (pF) CEP01N65/CEB01N65 CEF01N65 1.2 1.0 VGS=10,8,7V 0.8 VGS=5V 0.6 0.4 0.2 VGS=4V 0 0.0 4 8 12 16 20 24 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics ID, Drain Current (A) 2.4 2.0 1.6 1.2 0.8 25 C 0.4 TJ=125 C -55 C 0 1234567 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 300 250 Ciss 200 150 100 50 Coss Crss 0 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 VDS=VGS 1.2 ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) IS, Source-drain current (A) 3.0 ID=0.6A 2.5 VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 100 10-1 10-2 0.2 0.6 1.0 1.4 1.8 2.2 VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current VTH, Normalized Gate-Source Threshold Voltage 3 VGS, Gate to Source Voltage (V) ID, Drain Current (A) CEP01N65/CEB01N65 CEF01N65 10 VDS=480V ID=1.3A 8 6 4 2 0 0123456 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD VIN RL D VOUT VGS RGEN G S 101 RDS(ON)Limit 100 100ms 1ms 10ms DC 10-1 TC=25 C TJ=150 C 10-2 Single Pulse 100 101 102 103 VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area td(on) VOUT t on tr td(off) 90% 10% INVERTED toff tf 90% 10% VIN 10% 50% 90% 50% PULSE WIDTH 4 Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 100 D=0.5 10-1 0.2 0.1 0.05 0.02 0.01 Single Pulse 10-2 10-2 10-1 100 101 102 Square Wave Pulse Duration (msec) PDM t1 t2 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2 103 104 Figure 11. Normalized Thermal Transient Impedance Curve 4 .


CEP01N65 CEB01N65 CEF01N65


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