Document
CEP01N65/CEB01N65
CEF01N65
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP01N65 CEB01N65 CEF01N65
VDSS 650V 650V
650V
RDS(ON) 10.5Ω 10.5Ω
10.5Ω
ID 1.3A 1.3A 1.3A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM e
PD
650
±30
1.3 5.2 41 0.33
1.3 d 5.2 d 27 0.22
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 3 62.5
4.5 65
Units
V V A A W W/ C C
Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 1. 2007.March http://www.cet-mos.com
CEP01N65/CEB01N65 CEF01N65
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V
Gate Threshold Voltage Static Drain-Source On-Resistance
VGS(th) RDS(on)
VGS = VDS, ID = 250µA VGS = 10V, ID = 0.6A
Dynamic Characteristics c
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
gFS Ciss Coss Crss
VDS = 10V, ID = 0.6A VDS = 25V, VGS = 0V, f = 1.0 MHz
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 300V, ID = 1.3A, VGS = 10V, RGEN =4.7Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS = 480V, ID = 1.3A, VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS f
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 0.6A g
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 1A . g.Full package VSD test condition IS = 1A .
Min 650
2.5
Typ
8.5
0.8 205 45 20 14.3 14.6 22.9 16.6 5.7 1.9 2.4
Max Units
V 25 µA 10 uA -10 uA
4.5 V 10.5 Ω
S pF pF pF
28.6 29.2
45.8 33.2 7.5
ns ns ns ns nC nC nC
1.3 A 1.5 V
4
2
ID, Drain Current (A)
C, Capacitance (pF)
CEP01N65/CEB01N65 CEF01N65
1.2 1.0 VGS=10,8,7V
0.8 VGS=5V 0.6
0.4
0.2 VGS=4V
0 0.0 4
8 12
16 20 24
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
ID, Drain Current (A)
2.4
2.0
1.6
1.2
0.8 25 C
0.4 TJ=125 C
-55 C
0 1234567
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
300
250 Ciss
200
150
100 50 Coss Crss 0 0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS 1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation with Temperature
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
IS, Source-drain current (A)
3.0 ID=0.6A 2.5 VGS=10V 2.0 1.5 1.0 0.5 0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation
with Temperature
VGS=0V
100
10-1
10-2 0.2 0.6 1.0 1.4 1.8 2.2
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage
Variation with Source Current
VTH, Normalized Gate-Source Threshold Voltage
3
VGS, Gate to Source Voltage (V) ID, Drain Current (A)
CEP01N65/CEB01N65 CEF01N65
10 VDS=480V ID=1.3A
8
6
4
2
0 0123456
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
VDD
VIN RL D VOUT
VGS RGEN G
S
101
RDS(ON)Limit 100
100ms 1ms 10ms
DC
10-1
TC=25 C TJ=150 C 10-2 Single Pulse 100 101 102 103
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe Operating Area
td(on) VOUT
t on tr
td(off)
90%
10% INVERTED
toff tf
90%
10%
VIN
10%
50%
90% 50%
PULSE WIDTH
4
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
100 D=0.5
10-1
0.2
0.1
0.05 0.02 0.01
Single Pulse
10-2 10-2
10-1
100 101 102
Square Wave Pulse Duration (msec)
PDM
t1 t2
1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2
103
104
Figure 11. Normalized Thermal Transient Impedance Curve
4
.