CEF07N65

CEP07N65/CEB07N65 CEF07N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP07N65 VDSS 650V RDS(ON) 1.3Ω ID 7A @VGS 10V CEB07N65 650V 1.3Ω 7A 10V CEF07N65 650V 1.3Ω 7A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 650 ±30 7 28 166 1.3 7d 28d 50 0.4 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.75 62.5 2.5 65 Units V V A A W W/ C C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 3. 2012.Mar. http://www.cet-mos.com CEP07N65/CEB07N65 CEF07N65 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS...