2SA614

isc Silicon PNP Power Transistor 2SA614 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -55V (Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.5V (Max.)@ IC= -1A ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -55 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A PC Collector Power Dissipation 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -500μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -500μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -5; IC= 0 hFE DC Current Gain IC= -0.5A; VCE= -5V 2SA614 MIN TYP. MAX UNIT -55 V -80 V -5 V -0.5 V -50 μA -50 μA 40 240  hFE Classifications R O Y 40-80 70-140 120-240 NOTICE： ISC reserves the rights to make changes of...