ZXMP3A17DN8

ZXMP3A17DN8 DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.070 ; ID= -4.4A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS Motor Drive LCD backlighting SO8 ORDERING INFORMATION DEVICE REEL TAPE WIDTH ZXMP3A17DN8TA 7’‘ 12mm ZXMP3A17DN8TC 13’‘ 12mm QUANTITY PER REEL 500 units 2500 units DEVICE MARKING ZXMP 3A17D PINOUT Top view ISSUE 1 - OCTOBER 2005 1 ZXMP3A17DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@VGS=10V; TA=25ЊC (b)(d) @VGS=10V; TA=70ЊC (b)(d) @VGS=10V; TA=25ЊC (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at TA=25°C (a)(d) Linear Derating Factor Power Dissipation at TA=25°C (a)(e) Linear Derating Factor Power Dissipation at TA=25°C (b)(d) Linear Derating Factor Operating and Storage Temperature Range SYMBOL VDSS VGS ID IDM IS ISM PD PD PD Tj:Tstg LIMIT -30 Ϯ20 -4.4 -3.6 -3.4 -16.2 -2.5 -16.2 1.25 10 1.8 14 2.1 17 -55 to +150 UNIT V V A A A A A A W mW/°C W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d...