N-Channel MOSFET
MDP12N50B / MDF12N50B N-channel MOSFET 500V
MDP12N50B / MDF12N50B
N-Channel MOSFET 500V, 11.5A, 0.65Ω
General Descript...
Description
MDP12N50B / MDF12N50B N-channel MOSFET 500V
MDP12N50B / MDF12N50B
N-Channel MOSFET 500V, 11.5A, 0.65Ω
General Description
The MDP/F12N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDP/F12N50B is suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 500V ID = 11.5A RDS(ON) ≤ 0.65Ω
@VGS = 10V @VGS = 10V
Applications
Power Supply PFC Ballast
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Symbol VDSS VGSS
ID
IDM
PD
EAR dv/dt EAS TJ, Tstg
MDP12N50B MDF12N50B 500 ±30
11.5 11.5* 7.0 7.0* 46 46* 165 42 1.33 0.32
16.5 4.5 460 -55~150
Unit V V A A A W
W/ oC mJ V/ns mJ oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
May 2012. Version 1.1
Symbol RθJA RθJC
MDP12N50B 62.5 0.75
MDF12N50B 62.5 3.0
Unit oC/W
1 MagnaChip Semiconductor Ltd.
MDP12N50B / MDF12N50B N-channel MOSFET 500V
Ordering Information
Part Number MDP12N50BTH MDF12N50BTH
Temp. Range -55~150oC -55~150oC
Package TO-220 TO-220F
Packing Tube Tube
RoHS Status Halogen...
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