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T1M3F600A Dataheets PDF



Part Number T1M3F600A
Manufacturers Lite-On
Logo Lite-On
Description Sillicon Bidirectional Thyristors
Datasheet T1M3F600A DatasheetT1M3F600A Datasheet (PDF)

LITE-ON SEMICONDUCTOR Sensitive Gate Triacs Sillicon Bidirectional Thyristors FEATURES One-Piece, Injection-Molded Package Blocking Voltage to 600 Volts Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability Improved Noise Immunity (dv/dt Minimum of 20 V/msec at 110℃) High Surge Current of 10 Amps Pb.

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LITE-ON SEMICONDUCTOR Sensitive Gate Triacs Sillicon Bidirectional Thyristors FEATURES One-Piece, Injection-Molded Package Blocking Voltage to 600 Volts Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability Improved Noise Immunity (dv/dt Minimum of 20 V/msec at 110℃) High Surge Current of 10 Amps Pb-Free Package T1M3F-A SERIES TRIACs 1.0 AMPERES RMS 400 thru 600 VOLTS TO-92 (TO-226AA) TO-92 DIM. MIN. MAX. A 4.45 4.70 B 4.32 5.33 C 3.18 4.19 D 1.15 1.39 E 2.42 2.66 F 12.7 ------ G 2.04 2.66 I 3.43 ----- All Dimensions in millimeter PIN ASSIGNMENT 1 Main Terminal 1 2 Gate 3 Main Terminal 2 MAXIMUM RATINGS (Tj= 25℃ unless otherwise noticed) Rating Peak Repetitive Off– State Voltage (TJ= -40 to 110℃, Sine Wave, 50 to 60 Hz; Gate Open) T1M3F400A T1M3F600A Symbol VDRM, VRRM Value 400 600 Unit Volts On-State RMS Current Full Cycle Sine Wave 50 to 60 Hz (TC = 50℃) Peak Non-Repetitive Surge Current Full Cycle Sine Wave 60 Hz (Tj =25℃) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power ( t ≦2.0us ,Tc = 80℃) Average Gate Power (Tc = 80℃, t ≦8.3 ms ) Peak Gate Current ( t ≦2.0us ,Tc = 80℃) Peak Gate Voltage ( t ≦2.0us ,Tc = 80℃) Operating Junction Temperature Range Storage Temperature Range Notice: (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. IT(RMS) 1.0 Amp ITSM 10.0 Amps 22 It 0.60 As PGM 5.0 Watt PG(AV) 0.1 Watt IGM 1.0 Amp VGM 5.0 Volts TJ -40 to +110 ℃ Tstg -40 to +150 ℃ REV. 3, Oct-2010, KTXD13 RATING AND CHARACTERISTIC CURVES T1M3F-A SERIES THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction to Lead - Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RthJL RthJC RthJA TL Value 60 75 150 260 Unit ℃/W ℃ ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise noted) Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Reptitive Forward or Reverse Blocking Current (VD=Rated VDRM and VRRM; Gate OPen) Tj =25℃ Tj =110℃ ON CHARACTERISTICS Peak Forward On-State Voltage (ITM=± 1A Peak @Tp ≦2.0 ms, Duty Cycle ≦ 2%) Gate Trigger Current (VD = 12 Vdc; RL = 100 Ohms) Holding Current (VD = 12 V, Initiating Current = ± 200 mA, Gate Open) Turn-On Time (VD = Rated VDRM , ITM = 1.0 A pk, IG = 25 mA) Gate Trigger Voltage (VD = 12 Vdc; RL =100 Ohms) Latching Current (VD=12V,IG= 10 mA) Gate Non-Trigger Voltage (VD= 12V, RL= 100 Ohms , TJ=110 ℃) IDRM IRRM ---- ---- 10 uA ---- ---- 100 uA VTM IGT1 IGT2 IGT3 IGT4 IH tgt VGT1 VGT2 VGT3 VGT4 IL1 IL2 IL3 IL4 VGD ---- ---- 1.9 Volts ---- ---- 3.0 ------- ------- 3.0 3.0 mA ---- ---- 5.0 ---- 1.5 10 mA ---- 2 ---- us.


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