Document
LITE-ON SEMICONDUCTOR
Sensitive Gate Triacs Sillicon Bidirectional Thyristors
FEATURES
One-Piece, Injection-Molded Package Blocking Voltage to 600 Volts Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability Improved Noise Immunity (dv/dt Minimum of 20 V/msec at 110℃) High Surge Current of 10 Amps Pb-Free Package
T1M3F-A SERIES
TRIACs 1.0 AMPERES RMS 400 thru 600 VOLTS
TO-92 (TO-226AA)
TO-92
DIM. MIN. MAX.
A 4.45 4.70
B 4.32 5.33
C 3.18 4.19
D 1.15 1.39
E 2.42 2.66
F
12.7
------
G 2.04 2.66
I 3.43 -----
All Dimensions in millimeter
PIN ASSIGNMENT 1 Main Terminal 1 2 Gate 3 Main Terminal 2
MAXIMUM RATINGS (Tj= 25℃ unless otherwise noticed)
Rating Peak Repetitive Off– State Voltage (TJ= -40 to 110℃, Sine Wave, 50 to 60 Hz; Gate Open)
T1M3F400A T1M3F600A
Symbol
VDRM, VRRM
Value
400 600
Unit Volts
On-State RMS Current Full Cycle Sine Wave 50 to 60 Hz (TC = 50℃) Peak Non-Repetitive Surge Current Full Cycle Sine Wave 60 Hz (Tj =25℃) Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power ( t ≦2.0us ,Tc = 80℃)
Average Gate Power (Tc = 80℃, t ≦8.3 ms )
Peak Gate Current ( t ≦2.0us ,Tc = 80℃)
Peak Gate Voltage ( t ≦2.0us ,Tc = 80℃)
Operating Junction Temperature Range
Storage Temperature Range Notice: (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
IT(RMS)
1.0 Amp
ITSM
10.0
Amps
22
It
0.60
As
PGM 5.0 Watt
PG(AV)
0.1 Watt
IGM 1.0 Amp
VGM 5.0 Volts
TJ -40 to +110 ℃
Tstg -40 to +150 ℃ REV. 3, Oct-2010, KTXD13
RATING AND CHARACTERISTIC CURVES T1M3F-A SERIES
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance - Junction to Lead - Junction to Case - Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
Symbol
RthJL RthJC RthJA
TL
Value
60 75 150
260
Unit ℃/W
℃
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise noted)
Characteristics
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Peak Reptitive Forward or Reverse Blocking Current (VD=Rated VDRM and VRRM; Gate OPen)
Tj =25℃ Tj =110℃
ON CHARACTERISTICS
Peak Forward On-State Voltage (ITM=± 1A Peak @Tp ≦2.0 ms, Duty Cycle ≦ 2%)
Gate Trigger Current (VD = 12 Vdc; RL = 100 Ohms)
Holding Current (VD = 12 V, Initiating Current = ± 200 mA, Gate Open) Turn-On Time (VD = Rated VDRM , ITM = 1.0 A pk, IG = 25 mA)
Gate Trigger Voltage (VD = 12 Vdc; RL =100 Ohms)
Latching Current (VD=12V,IG= 10 mA)
Gate Non-Trigger Voltage (VD= 12V, RL= 100 Ohms , TJ=110 ℃)
IDRM IRRM
---- ---- 10 uA ---- ---- 100 uA
VTM
IGT1 IGT2 IGT3 IGT4
IH
tgt
VGT1 VGT2 VGT3 VGT4
IL1 IL2 IL3 IL4
VGD
---- ---- 1.9 Volts
---- ---- 3.0
-------
-------
3.0 3.0
mA
---- ---- 5.0
---- 1.5 10 mA
---- 2 ---- us.