3DD5011

CASE-RATED BIPOLAR TRANSISTOR 3DD5011 FOR LOW FREQUENCY AMPLIFICATION R 3DD5011 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 900V 10 A 0.5 V(max) 0.3 μs(max) z APPLICATIONS z Switching power supply for color TV. Package TO-3P(H)IS FEATURES 123 z3DD5011 NPN z 3DD5011 is high breakdown ， voltage of NPN bipolar transistor. EQUIVALENT CIRCUIT The main process of manufacture: ： high voltage planar technology, 、, triple diffused process etc., 。 adoption of fully plastic packge. （RoHS）。 RoHS product. ORDER MESSAGE Order codes Marking Halogen Free Package 3DD5011-O-A-N-D D5011 TO-3P(H)IS Packaging Foam Device Weight 5.50 g(typ) ：201504A 1/5 R ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol — Collector−Base Voltage BVCBO — Collector−Emitter Voltage BVCEO — Emitter−Base Voltage BVEBO Collector Current DC Pulse IC ICP Base Current IB Collector Power Dissipation PC Max. Junction Temperature Tj Storage Temperature Range TSTG 3DD5011 Value 900 Unit V 600 V 6V 10 20 A 5A 50 W 150 -55~+150 ℃ ℃ ELECTRICAL CHARACTERISTICS (Tc=25℃) Parameter V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO HFE VCE(sat) VBE(sat) tf ts ft Tests conditions IC=10mA,IB=0 IC=1mA,IE=0 IE=1mA,IC=0 VCB=900V, IE=0 VEB=6V, IC=0 VCE = 5V, IC = 1A VCE = 5V, IC = 5A IC=3A, IB=0.6A IC=3A, IB=0.6A IC=5A,2IB1=-IB2=2A fH=15.75kHz VCE=10V, IC=0.1A Min 600 900 6 20 6 1.7 Max 1 10 35 0.5 1.3 0.3 4 Unit V V V mA μA V V μs μs MHz ：201504A 2/5 R ...