CEP85A3/CEB85A3
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
25V, 90A, RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-263 & TO-220 package.
D
GS CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S...
