CEP83A3G/CEB83A3G
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 102A, RDS(ON) = 4.2 mΩ @VGS = 10V. RDS(ON) = 6.2 mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
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CEB SERIES TO-263(DD-PAK)
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