CEP6086L/CEB6086L
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 72A, RDS(ON) = 10mΩ @...
CEP6086L/CEB6086L
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
60V, 72A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package.
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedz
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
ID
72 51
Drain Current-Pulsed a
IDM 288
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
75 0.5
Single Pulsed Avalanche Energy d
EAS 132
Single Pulsed Avalanche Current d
IAS 23
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2
62.5
Units V V A A A W
W/ C mJ A C
Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 2. 2012.Jan http://www.cet-mos.com
CEP6086L/CEB6086L
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source...