CEB9060N

CEP9060N/CEB9060N CEF9060N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP9060N CEB9060N CEF9060N VDSS 55V 55V 55V RDS(ON) 10.5mΩ 10.5mΩ 10.5mΩ ID 90A 90A 90A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for through hole. D G D GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 TO-220F VDS 55 VGS ±20 ID 90 90 e IDM f 360 360 e 166 49 PD 1.11 0.33 EAS IAS TJ,Tstg 325 325 50 50 -55 to 175 Units V V A A W W/ C mJ A C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.9 62.5 3 65 Units C/W C/W Details are subject to change without notice . 1 Rev 4. 2007.Oct. http://www.cet-mos.com CEP9060N/CEB9060N CEF9060N Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Off Characteristics Symbol Test Condition Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Lea...